High mobility two-dimensional hole gas in an al0.26ga 0.74as/gaas heterojunction

W. I. Wang; E. E. Mendez; Y. Iye; B. Lee; M. H. Kim; G. E. Stillman

doi:10.1063/1.337227

High mobility two-dimensional hole gas in an al_0.26ga _0.74as/gaas heterojunction

W. I. Wang
, E. E. Mendez
, Y. Iye
, B. Lee
, M. H. Kim
, G. E. Stillman

Physics and Astronomy

IBM
University of Illinois at Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

We have obtained two-dimensional hole gas with low temperature mobility as high as 3.8×10⁵ cm² V^-1 s ^-1 at a density of 1×10¹¹ cm^-2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.

Original language	English
Pages (from-to)	1834-1835
Number of pages	2
Journal	Journal of Applied Physics
Volume	60
Issue number	5
DOIs	https://doi.org/10.1063/1.337227
State	Published - 1986

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title = "High mobility two-dimensional hole gas in an al0.26ga 0.74as/gaas heterojunction",

abstract = "We have obtained two-dimensional hole gas with low temperature mobility as high as 3.8×105 cm2 V-1 s -1 at a density of 1×1011 cm-2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.",

author = "Wang, \{W. I.\} and Mendez, \{E. E.\} and Y. Iye and B. Lee and Kim, \{M. H.\} and Stillman, \{G. E.\}",

year = "1986",

doi = "10.1063/1.337227",

language = "English",

volume = "60",

pages = "1834--1835",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - High mobility two-dimensional hole gas in an al0.26ga 0.74as/gaas heterojunction

AU - Wang, W. I.

AU - Mendez, E. E.

AU - Iye, Y.

AU - Lee, B.

AU - Kim, M. H.

AU - Stillman, G. E.

PY - 1986

Y1 - 1986

N2 - We have obtained two-dimensional hole gas with low temperature mobility as high as 3.8×105 cm2 V-1 s -1 at a density of 1×1011 cm-2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.

AB - We have obtained two-dimensional hole gas with low temperature mobility as high as 3.8×105 cm2 V-1 s -1 at a density of 1×1011 cm-2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.

UR - https://www.scopus.com/pages/publications/11644294995

U2 - 10.1063/1.337227

DO - 10.1063/1.337227

M3 - Article

AN - SCOPUS:11644294995

SN - 0021-8979

VL - 60

SP - 1834

EP - 1835

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

High mobility two-dimensional hole gas in an al_0.26ga _0.74as/gaas heterojunction

Abstract

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