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High-performance oscillators and power combiners with InP Gunn devices at 260-330 GHz

  • IEEE
  • University of Leeds

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

InP Gunn devices with graded doping profiles were evaluated for second-harmonic power extraction above 260 GHz. The best devices generated radio frequency (RF) output power levels of 3.9 mW at 275 GHz, 4.8 mW at 282 GHz, 3.7 mW at 297 GHz, 1.6 mW at 329 GHz, and 0.7 mW at 333 GHz with corresponding dc-to-RF conversion efficiencies of 0.24%, 0.31%, 0.32%, 0.19%, and 0.07%. The highest observed second-harmonic frequency was 345 GHz. Two devices each in an in-line power combining circuit generated 6.1 mW at 285 GHz and 2.7 mW at 316 GHz with combining efficiencies of more than 65%.

Original languageEnglish
Pages (from-to)284-286
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume16
Issue number5
DOIs
StatePublished - May 2006

Keywords

  • Gunn devices
  • Millimeter-wave devices
  • Millimeter-wave generation
  • Millimeter-wave oscillators
  • Oscillator noise
  • Phase noise
  • Power combining
  • Submillimeter-wave devices
  • Submillimeter-wave generation
  • Submillimeter-wave oscillators

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