High-power 2.3-μm GaSb-based linear laser array

L. Shterengas; G. L. Belenky; A. Gourevitch; D. Donetsky; J. G. Kim; R. U. Martinelli; D. Westerfeld

doi:10.1109/LPT.2004.833920

High-power 2.3-μm GaSb-based linear laser array

L. Shterengas
, G. L. Belenky
, A. Gourevitch
, D. Donetsky
, J. G. Kim
, R. U. Martinelli
, D. Westerfeld

Electrical Engineering

Stony Brook University
Sarnoff Corporation

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

High-power 2.3-μm In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-μm-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18 °C. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.

Original language	English
Pages (from-to)	2218-2220
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2004.833920
State	Published - Oct 2004

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10.1109/LPT.2004.833920

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title = "High-power 2.3-μm GaSb-based linear laser array",

abstract = "High-power 2.3-μm In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-μm-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18 °C. Array power conversion efficiency peaked at 30 A and was about 9\%. Device internal efficiency was about 50\%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.",

author = "L. Shterengas and Belenky, \{G. L.\} and A. Gourevitch and D. Donetsky and Kim, \{J. G.\} and Martinelli, \{R. U.\} and D. Westerfeld",

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doi = "10.1109/LPT.2004.833920",

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T1 - High-power 2.3-μm GaSb-based linear laser array

AU - Shterengas, L.

AU - Belenky, G. L.

AU - Gourevitch, A.

AU - Donetsky, D.

AU - Kim, J. G.

AU - Martinelli, R. U.

AU - Westerfeld, D.

PY - 2004/10

Y1 - 2004/10

N2 - High-power 2.3-μm In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-μm-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18 °C. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.

AB - High-power 2.3-μm In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-μm-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18 °C. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.

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DO - 10.1109/LPT.2004.833920

M3 - Article

AN - SCOPUS:5444244502

SN - 1041-1135

VL - 16

SP - 2218

EP - 2220

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

ER -

High-power 2.3-μm GaSb-based linear laser array

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