High Power Density 1700-V/ 300-A Si-IGBT and SiC-MOSFET Hybrid Switch-based Half-bridge Power Module

The design and fabrication of a 1.7-kV and 300-A rated half-bridge multi-chip power module with a Si-IGBT and SiC-MOSFET hybrid switch is presented. The proposed module consists of two Si-IGBT dies in parallel with one SiC-MOSFET die to achieve a 6-over-1 current ratio at each switch position. This high current ratio yields significant cost savings compared to an all-SiC power module. The overall power loop inductance is 12.38 nH. The presented module has two key attributes: First, it is wire bond-less, by employing high-reliability silver clips for topside interconnection. Second, a novel metal-encapsulated thermal pyrolytic graphite baseplate is used to reduces thermal coupling among the Si and SiC die enabling higher junction temperature for SiC die relative to the Si die. The evaluation of the module in switching tests is presented.