Abstract
With the electrification of society and the green transition, the need for efficient high-power electronic converters to support the electricity demand is at an all-time high. A key enabler is the emerging medium voltage (MV) silicon-carbide (SiC) semiconductor devices, which offer improved static and dynamic performance compared to their silicon-counterparts. This article presents a thorough overview of the recent advancements within the MV SiC technology, examining both available semiconductor devices and power modules from industry and academia and directly associates them to their applicability through a comprehensive review of typical high-power electronic applications. At last, the future perspectives on the applicability and commercial widespread of the MV SiC technology are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 987-1011 |
| Number of pages | 25 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 40 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2025 |
Keywords
- Commercialization of medium-voltage (MV) silicon carbide (SiC)
- MOSFET
- insulated-gate bipolar transistor (IGBT)
- overview of applicability
- perspectives
- policy-making
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