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High-Power Electronic Applications Enabled by Medium Voltage Silicon-Carbide Technology: An Overview

  • Morten Rahr Nielsen
  • , Shiyue Deng
  • , Abdul Basit Mirza
  • , Benjamin Futtrup Kjaersgaard
  • , Asger Bjorn Jorgensen
  • , Hongbo Zhao
  • , Yang Li
  • , Stig Munk-Nielsen
  • , Fang Luo
  • Aalborg University
  • Stony Brook University
  • Eaton Corporation
  • PowerCon A/S

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

With the electrification of society and the green transition, the need for efficient high-power electronic converters to support the electricity demand is at an all-time high. A key enabler is the emerging medium voltage (MV) silicon-carbide (SiC) semiconductor devices, which offer improved static and dynamic performance compared to their silicon-counterparts. This article presents a thorough overview of the recent advancements within the MV SiC technology, examining both available semiconductor devices and power modules from industry and academia and directly associates them to their applicability through a comprehensive review of typical high-power electronic applications. At last, the future perspectives on the applicability and commercial widespread of the MV SiC technology are presented.

Original languageEnglish
Pages (from-to)987-1011
Number of pages25
JournalIEEE Transactions on Power Electronics
Volume40
Issue number1
DOIs
StatePublished - 2025

Keywords

  • Commercialization of medium-voltage (MV) silicon carbide (SiC)
  • MOSFET
  • insulated-gate bipolar transistor (IGBT)
  • overview of applicability
  • perspectives
  • policy-making

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