High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 μm

Jiang Jiang; Leon Shterengas; Gela Kipshidze; Aaron Stein; Alexey Belyanin; Gregory Belenky

doi:10.1364/OL.422536

High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 μm

Jiang Jiang
, Leon Shterengas
, Gela Kipshidze
, Aaron Stein
, Alexey Belyanin
, Gregory Belenky

Electrical Engineering

Stony Brook University
Brookhaven National Laboratory
Texas A&M University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Stable high-power narrow-linewidth operation of the 2.05-2.1 μm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 μm wide ridge waveguides generated ∼850mW in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrumwas defined byBragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10meV.

Original language	English
Pages (from-to)	1967-1970
Number of pages	4
Journal	Optics Letters
Volume	46
Issue number	8
DOIs	https://doi.org/10.1364/OL.422536
State	Published - Apr 15 2021

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10.1364/OL.422536

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@article{c924860d0bf149fc84ccb8768340027c,

title = "High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 μm",

abstract = "Stable high-power narrow-linewidth operation of the 2.05-2.1 μm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 μm wide ridge waveguides generated ∼850mW in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrumwas defined byBragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10meV.",

author = "Jiang Jiang and Leon Shterengas and Gela Kipshidze and Aaron Stein and Alexey Belyanin and Gregory Belenky",

note = "Publisher Copyright: {\textcopyright}2021 Optical Society of America.",

year = "2021",

month = apr,

day = "15",

doi = "10.1364/OL.422536",

language = "English",

volume = "46",

pages = "1967--1970",

journal = "Optics Letters",

issn = "0146-9592",

number = "8",

}

TY - JOUR

T1 - High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 μm

AU - Jiang, Jiang

AU - Shterengas, Leon

AU - Kipshidze, Gela

AU - Stein, Aaron

AU - Belyanin, Alexey

AU - Belenky, Gregory

PY - 2021/4/15

Y1 - 2021/4/15

N2 - Stable high-power narrow-linewidth operation of the 2.05-2.1 μm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 μm wide ridge waveguides generated ∼850mW in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrumwas defined byBragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10meV.

AB - Stable high-power narrow-linewidth operation of the 2.05-2.1 μm GaSb-based diode lasers was achieved by utilizing the sixth-order surface-etched distributed Bragg reflector (DBR) mirrors. The DBR multimode devices with 100 μm wide ridge waveguides generated ∼850mW in the continuous wave (CW) regime at 20°C. The device CW output power was limited by thermal rollover. The laser emission spectrumwas defined byBragg reflector reflectivity at all operating currents in a wide temperature range. The devices operated at DBR line with detuning from gain peak exceeding 10meV.

UR - https://www.scopus.com/pages/publications/85104477026

U2 - 10.1364/OL.422536

DO - 10.1364/OL.422536

M3 - Article

C2 - 33857118

AN - SCOPUS:85104477026

SN - 0146-9592

VL - 46

SP - 1967

EP - 1970

JO - Optics Letters

JF - Optics Letters

IS - 8

ER -

High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 μm

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