High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

J. G. Kim; L. Shterengas; R. U. Martinelli; G. L. Belenky

doi:10.1063/1.1605245

High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

J. G. Kim
, L. Shterengas
, R. U. Martinelli
, G. L. Belenky

Electrical Engineering

Sarnoff Corporation
Stony Brook University

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

Fabrication and characterization of 2.7 and 2.8 μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers were carried out. Continuous wave operation up to 500 mW was recorded at 16°C from 2.7 μm lasers, while 160 mW was obtained from 2.8 μm lasers. The devices have differential series resistance of about 0.18 ω with estimated thermal resistance of about 5 K/W.

Original language	English
Pages (from-to)	1926-1928
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.1605245
State	Published - Sep 8 2003

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@article{889d7f7f7f1b4692ac7a347c25625c8c,

title = "High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers",

abstract = "Fabrication and characterization of 2.7 and 2.8 μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers were carried out. Continuous wave operation up to 500 mW was recorded at 16°C from 2.7 μm lasers, while 160 mW was obtained from 2.8 μm lasers. The devices have differential series resistance of about 0.18 ω with estimated thermal resistance of about 5 K/W.",

author = "Kim, \{J. G.\} and L. Shterengas and Martinelli, \{R. U.\} and Belenky, \{G. L.\}",

year = "2003",

month = sep,

day = "8",

doi = "10.1063/1.1605245",

language = "English",

volume = "83",

pages = "1926--1928",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "10",

}

TY - JOUR

T1 - High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

AU - Kim, J. G.

AU - Shterengas, L.

AU - Martinelli, R. U.

AU - Belenky, G. L.

PY - 2003/9/8

Y1 - 2003/9/8

N2 - Fabrication and characterization of 2.7 and 2.8 μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers were carried out. Continuous wave operation up to 500 mW was recorded at 16°C from 2.7 μm lasers, while 160 mW was obtained from 2.8 μm lasers. The devices have differential series resistance of about 0.18 ω with estimated thermal resistance of about 5 K/W.

AB - Fabrication and characterization of 2.7 and 2.8 μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers were carried out. Continuous wave operation up to 500 mW was recorded at 16°C from 2.7 μm lasers, while 160 mW was obtained from 2.8 μm lasers. The devices have differential series resistance of about 0.18 ω with estimated thermal resistance of about 5 K/W.

UR - https://www.scopus.com/pages/publications/0141990463

U2 - 10.1063/1.1605245

DO - 10.1063/1.1605245

M3 - Article

AN - SCOPUS:0141990463

SN - 0003-6951

VL - 83

SP - 1926

EP - 1928

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

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