@inproceedings{45dc43b918ec4c75981ebc2597ee7b63,
title = "High quality AlN single crystal substrates for AlGaN-based devices",
abstract = "Aluminum nitride (AlN) single crystal boules were grown by physical vapor transport (PVT). Diameter expansion during boule growth, without the introduction of low angle grain boundaries (LAGB) around the boule periphery, was confirmed by crossed polarizer imaging, synchrotron white beam x-ray topography (SWBXT), and synchrotron monochromatic beam x-ray topography (SMBXT). The densities of basal plane dislocations (BPD) and threading edge dislocations (TED) averaged from high-magnification topographs of five regions of a high-quality substrate were 0 cm-2 and 992 cm-2, respectively. Substrates fabricated from AlN boules possessed excellent surface finishes suitable for epitaxy.",
keywords = "Aluminum nitride, Dislocations, Low angle grain boundaries, Physical vapor transport, Single crystal, X-ray topography",
author = "Rafael Dalmau and Craft, \{H. Spalding\} and Jeffrey Britt and Elizabeth Paisley and Baxter Moody and Jianqiu Guo and Yeonjae Ji and Balaji Raghothamachar and Michael Dudley and Raoul Schlesser",
note = "Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland.; International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 ; Conference date: 17-09-2017 Through 22-09-2017",
year = "2018",
doi = "10.4028/www.scientific.net/MSF.924.923",
language = "English",
isbn = "9783035711455",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "923--926",
editor = "Robert Stahlbush and Philip Neudeck and Anup Bhalla and Devaty, \{Robert P.\} and Michael Dudley and Aivars Lelis",
booktitle = "Silicon Carbide and Related Materials, 2017",
}