High Quality P-Type 4H-SiC Growth by PVT Method

The fabrication of n-channel IGBTs is constrained by the low conductivity as well as poor quality of the p-type SiC substrate. This paper reports a 6-inch high quality p-type 4H-SiC wafer achieved by PVT method. The wafer was examined by synchrotron X-ray topography indicating average defect densities are on par or better than commercial 6-inch n-type wafers. Large areas of the wafer, especially the middle region of the wafer is characterized by very low density of BPDs. The extent of prismatic slip due to radial thermal gradients is also vastly reduced compared to typical n-type wafers.