Skip to main navigation Skip to search Skip to main content

High-resolution topography analysis on threading edge dislocations in 4H-SiC epilayers

  • I. Kamata
  • , M. Nagano
  • , H. Tsuchida
  • , Yi Chen
  • , M. Dudley
  • Central Research Institute of Electric Power Industry
  • Stony Brook University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

30 Scopus citations

Abstract

Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of TED image are confirmed to correspond to the Burgers vector directions by a comparison of computer simulated images and observed topography images in crystal boundaries. Using a mapping method, a wide spatial distribution of the six types of TED is examined in a quarter section of a 2-inch wafer.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages305-308
Number of pages4
ISBN (Print)9780878493579
DOIs
StatePublished - 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country/TerritoryJapan
CityOtsu
Period10/14/0710/19/07

Keywords

  • Dislocations
  • Edge dislocations
  • TED
  • Topography

Fingerprint

Dive into the research topics of 'High-resolution topography analysis on threading edge dislocations in 4H-SiC epilayers'. Together they form a unique fingerprint.

Cite this