High-resolution X-ray topography of dislocations in 4H-SiC epilayers

Isaho Kamata; Hidekazu Tsuchida; William M. Vetter; Michael Dudley

doi:10.1557/proc-0911-b05-11

High-resolution X-ray topography of dislocations in 4H-SiC epilayers

Isaho Kamata
, Hidekazu Tsuchida
, William M. Vetter
, Michael Dudley

Materials Science and Engineering

Central Research Institute of Electric Power Industry
Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Synchrotron X-ray topography with high-resolution setup using 11-28 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading edge dislocation (TED) images depending upon their Burgers vectors direction were observed. The four types of TED images were previously calculated by the computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated.

Original language	English
Title of host publication	Silicon Carbide 2006 - Materials, Processing and Devices
Publisher	Materials Research Society
Pages	175-180
Number of pages	6
ISBN (Print)	1558998721, 9781558998728
DOIs	https://doi.org/10.1557/proc-0911-b05-11
State	Published - 2006
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 18 2006 → Apr 20 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	911
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	04/18/06 → 04/20/06

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10.1557/proc-0911-b05-11

Cite this

@inproceedings{e921fce90a834e978c932745acf165ca,

title = "High-resolution X-ray topography of dislocations in 4H-SiC epilayers",

abstract = "Synchrotron X-ray topography with high-resolution setup using 11-28 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading edge dislocation (TED) images depending upon their Burgers vectors direction were observed. The four types of TED images were previously calculated by the computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated.",

author = "Isaho Kamata and Hidekazu Tsuchida and Vetter, \{William M.\} and Michael Dudley",

year = "2006",

doi = "10.1557/proc-0911-b05-11",

language = "English",

isbn = "1558998721",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "175--180",

booktitle = "Silicon Carbide 2006 - Materials, Processing and Devices",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 20-04-2006",

}

Kamata, I, Tsuchida, H, Vetter, WM & Dudley, M 2006, High-resolution X-ray topography of dislocations in 4H-SiC epilayers. in Silicon Carbide 2006 - Materials, Processing and Devices. Materials Research Society Symposium Proceedings, vol. 911, Materials Research Society, pp. 175-180, 2006 MRS Spring Meeting, San Francisco, CA, United States, 04/18/06. https://doi.org/10.1557/proc-0911-b05-11

High-resolution X-ray topography of dislocations in 4H-SiC epilayers. / Kamata, Isaho; Tsuchida, Hidekazu; Vetter, William M. et al.
Silicon Carbide 2006 - Materials, Processing and Devices. Materials Research Society, 2006. p. 175-180 (Materials Research Society Symposium Proceedings; Vol. 911).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-resolution X-ray topography of dislocations in 4H-SiC epilayers

AU - Kamata, Isaho

AU - Tsuchida, Hidekazu

AU - Vetter, William M.

AU - Dudley, Michael

PY - 2006

Y1 - 2006

N2 - Synchrotron X-ray topography with high-resolution setup using 11-28 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading edge dislocation (TED) images depending upon their Burgers vectors direction were observed. The four types of TED images were previously calculated by the computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated.

AB - Synchrotron X-ray topography with high-resolution setup using 11-28 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading edge dislocation (TED) images depending upon their Burgers vectors direction were observed. The four types of TED images were previously calculated by the computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated.

UR - https://www.scopus.com/pages/publications/33750323270

U2 - 10.1557/proc-0911-b05-11

DO - 10.1557/proc-0911-b05-11

M3 - Conference contribution

AN - SCOPUS:33750323270

SN - 1558998721

SN - 9781558998728

T3 - Materials Research Society Symposium Proceedings

SP - 175

EP - 180

BT - Silicon Carbide 2006 - Materials, Processing and Devices

PB - Materials Research Society

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 20 April 2006

ER -

High-resolution X-ray topography of dislocations in 4H-SiC epilayers

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