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High signal-to-noise ratio avalanche photodiodes with perimeter field gate and active readout

  • University of Maryland, College Park

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

This letter describes an avalanche photodiode (APD) fabricated in a 0.5-μm CMOS process. In Geiger mode, the APD had an area-normalized dark count rate as low as 2 Hzμm 2 at room temperature. Its signal-to-noise ratio (SNR) increased by an order of magnitude as a result of perimeter field gating. We demonstrate that under high-illumination conditions, perimeter field gating maximizes SNR, whereas under low-light conditions, it maximizes sensitivity.

Original languageEnglish
Article number6165634
Pages (from-to)570-572
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
StatePublished - Apr 2012

Keywords

  • Avalanche breakdown
  • avalanche photodiodes (APDs)

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