Abstract
This letter describes an avalanche photodiode (APD) fabricated in a 0.5-μm CMOS process. In Geiger mode, the APD had an area-normalized dark count rate as low as 2 Hzμm 2 at room temperature. Its signal-to-noise ratio (SNR) increased by an order of magnitude as a result of perimeter field gating. We demonstrate that under high-illumination conditions, perimeter field gating maximizes SNR, whereas under low-light conditions, it maximizes sensitivity.
| Original language | English |
|---|---|
| Article number | 6165634 |
| Pages (from-to) | 570-572 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2012 |
Keywords
- Avalanche breakdown
- avalanche photodiodes (APDs)
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