Abstract
This letter reports the experimental study of hot-electron absorption and emission of far-infrared radiation in GaAs/(Al,Ga)As quantum-well structures. The emission and absorption processes discussed here are associated with intrasubband transitions; these processes are assisted by nonequilibrium optical phonons, and by scattering at rough interfaces and at impurity sites. We show how the far-infrared emission spectra of the hot-electron gas can be used to extract the electron temperature Te.
| Original language | English |
|---|---|
| Pages (from-to) | 2930-2932 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 75 |
| Issue number | 19 |
| DOIs | |
| State | Published - Nov 8 1999 |
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