Hot electron FIR emission and absorption in GaAs/AlGaAs QW

L. E. Vorobjev; S. N. Danilov; D. V. Donetsky; V. L. Zerova; Yu V. Kochegarov; D. A. Firsov; V. A. Shalygin; G. G. Zegrya; E. Towe

Hot electron FIR emission and absorption in GaAs/AlGaAs QW

L. E. Vorobjev
, S. N. Danilov
, D. V. Donetsky
, V. L. Zerova
, Yu V. Kochegarov
, D. A. Firsov
, V. A. Shalygin
, G. G. Zegrya
, E. Towe

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University
Ioffe Physical Technical Institute
University of Virginia

Research output: Contribution to journal › Article › peer-review

Abstract

The aim of this work was to find out and experimentally and theoretically investigate spontaneous far-infrared (FIR, λ = 70...300 μm) emission and absorption under electron heating in longitudinal electric field in GaAs/AlGaAs multiple quantum well structures. The observed phenomena are connected with indirect transitions of hot electrons within the ground subband of quantum well. Emission spectra were observed experimentally and calculated theoretically. Optical phonon, impurity and interface roughness scattering as well as electron-electron scattering are taken into account during calculation of electron transition probability. From comparing the experimental emission spectra with theoretical ones the hot electron temperature is determined.

Original language	English
Pages (from-to)	45-48
Number of pages	4
Journal	Materials Science Forum
Volume	297-298
State	Published - 1999

Keywords

Absorption
Emission
Far-Infrared Range
Nanostructures
Quantum Wells
Submillimeter Range

Cite this

@article{24c9443a5c3e474f9bafb1773db0e301,

title = "Hot electron FIR emission and absorption in GaAs/AlGaAs QW",

abstract = "The aim of this work was to find out and experimentally and theoretically investigate spontaneous far-infrared (FIR, λ = 70...300 μm) emission and absorption under electron heating in longitudinal electric field in GaAs/AlGaAs multiple quantum well structures. The observed phenomena are connected with indirect transitions of hot electrons within the ground subband of quantum well. Emission spectra were observed experimentally and calculated theoretically. Optical phonon, impurity and interface roughness scattering as well as electron-electron scattering are taken into account during calculation of electron transition probability. From comparing the experimental emission spectra with theoretical ones the hot electron temperature is determined.",

keywords = "Absorption, Emission, Far-Infrared Range, Nanostructures, Quantum Wells, Submillimeter Range",

author = "Vorobjev, \{L. E.\} and Danilov, \{S. N.\} and Donetsky, \{D. V.\} and Zerova, \{V. L.\} and Kochegarov, \{Yu V.\} and Firsov, \{D. A.\} and Shalygin, \{V. A.\} and Zegrya, \{G. G.\} and E. Towe",

year = "1999",

language = "English",

volume = "297-298",

pages = "45--48",

journal = "Materials Science Forum",

issn = "0255-5476",

}

TY - JOUR

T1 - Hot electron FIR emission and absorption in GaAs/AlGaAs QW

AU - Vorobjev, L. E.

AU - Danilov, S. N.

AU - Donetsky, D. V.

AU - Zerova, V. L.

AU - Kochegarov, Yu V.

AU - Firsov, D. A.

AU - Shalygin, V. A.

AU - Zegrya, G. G.

AU - Towe, E.

PY - 1999

Y1 - 1999

N2 - The aim of this work was to find out and experimentally and theoretically investigate spontaneous far-infrared (FIR, λ = 70...300 μm) emission and absorption under electron heating in longitudinal electric field in GaAs/AlGaAs multiple quantum well structures. The observed phenomena are connected with indirect transitions of hot electrons within the ground subband of quantum well. Emission spectra were observed experimentally and calculated theoretically. Optical phonon, impurity and interface roughness scattering as well as electron-electron scattering are taken into account during calculation of electron transition probability. From comparing the experimental emission spectra with theoretical ones the hot electron temperature is determined.

AB - The aim of this work was to find out and experimentally and theoretically investigate spontaneous far-infrared (FIR, λ = 70...300 μm) emission and absorption under electron heating in longitudinal electric field in GaAs/AlGaAs multiple quantum well structures. The observed phenomena are connected with indirect transitions of hot electrons within the ground subband of quantum well. Emission spectra were observed experimentally and calculated theoretically. Optical phonon, impurity and interface roughness scattering as well as electron-electron scattering are taken into account during calculation of electron transition probability. From comparing the experimental emission spectra with theoretical ones the hot electron temperature is determined.

KW - Absorption

KW - Emission

KW - Far-Infrared Range

KW - Nanostructures

KW - Quantum Wells

KW - Submillimeter Range

UR - https://www.scopus.com/pages/publications/33751048622

M3 - Article

AN - SCOPUS:33751048622

SN - 0255-5476

VL - 297-298

SP - 45

EP - 48

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Hot electron FIR emission and absorption in GaAs/AlGaAs QW

Abstract

Keywords

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