InAs1-xSbx alloys with native lattice parameters grown on compositionally graded buffers: Structural and optical properties

D. Wang; D. Donetsky; Y. Lin; G. Kipshidze; L. Shterengas; G. Belenky; W. L. Sarney; S. P. Svensson

doi:10.1142/S0129156412500139

InAs_1-xSb_x alloys with native lattice parameters grown on compositionally graded buffers: Structural and optical properties

D. Wang
, D. Donetsky
, Y. Lin
, G. Kipshidze
, L. Shterengas
, G. Belenky
, W. L. Sarney
, S. P. Svensson

Electrical Engineering

Stony Brook University
U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs_1-xSb_x epitaxial alloys with strain-free native lattice constants up to 2.1% larger than that of GaSb. The in-plane lattice constant of the strained top buffer layer was grown to be equal to the native, unstrained lattice constant of InAs _1-xSb_x with given x. The InAs_0.56Sb _0.44 layers demonstrated a photoluminescence (PL) peak at 9.4 μm at T = 150 K. The minority carrier lifetime measured at 77 K for InAs _0.8Sb_0.2 was 250 ns.

Original language	English
Article number	1250013
Journal	International Journal of High Speed Electronics and Systems
Volume	21
Issue number	1
DOIs	https://doi.org/10.1142/S0129156412500139
State	Published - Mar 2012

Keywords

compositionally graded buffer
InAsSb
infrared
MBE
minority carrier lifetime
reciprocal space mapping

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10.1142/S0129156412500139

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title = "InAs1-xSbx alloys with native lattice parameters grown on compositionally graded buffers: Structural and optical properties",

abstract = "GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-xSbx epitaxial alloys with strain-free native lattice constants up to 2.1\% larger than that of GaSb. The in-plane lattice constant of the strained top buffer layer was grown to be equal to the native, unstrained lattice constant of InAs 1-xSbx with given x. The InAs0.56Sb 0.44 layers demonstrated a photoluminescence (PL) peak at 9.4 μm at T = 150 K. The minority carrier lifetime measured at 77 K for InAs 0.8Sb0.2 was 250 ns.",

keywords = "compositionally graded buffer, InAsSb, infrared, MBE, minority carrier lifetime, reciprocal space mapping",

author = "D. Wang and D. Donetsky and Y. Lin and G. Kipshidze and L. Shterengas and G. Belenky and Sarney, \{W. L.\} and Svensson, \{S. P.\}",

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language = "English",

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journal = "International Journal of High Speed Electronics and Systems",

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TY - JOUR

T1 - InAs1-xSbx alloys with native lattice parameters grown on compositionally graded buffers

T2 - Structural and optical properties

AU - Wang, D.

AU - Donetsky, D.

AU - Lin, Y.

AU - Kipshidze, G.

AU - Shterengas, L.

AU - Belenky, G.

AU - Sarney, W. L.

AU - Svensson, S. P.

PY - 2012/3

Y1 - 2012/3

N2 - GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-xSbx epitaxial alloys with strain-free native lattice constants up to 2.1% larger than that of GaSb. The in-plane lattice constant of the strained top buffer layer was grown to be equal to the native, unstrained lattice constant of InAs 1-xSbx with given x. The InAs0.56Sb 0.44 layers demonstrated a photoluminescence (PL) peak at 9.4 μm at T = 150 K. The minority carrier lifetime measured at 77 K for InAs 0.8Sb0.2 was 250 ns.

AB - GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-xSbx epitaxial alloys with strain-free native lattice constants up to 2.1% larger than that of GaSb. The in-plane lattice constant of the strained top buffer layer was grown to be equal to the native, unstrained lattice constant of InAs 1-xSbx with given x. The InAs0.56Sb 0.44 layers demonstrated a photoluminescence (PL) peak at 9.4 μm at T = 150 K. The minority carrier lifetime measured at 77 K for InAs 0.8Sb0.2 was 250 ns.

KW - compositionally graded buffer

KW - InAsSb

KW - infrared

KW - MBE

KW - minority carrier lifetime

KW - reciprocal space mapping

UR - https://www.scopus.com/pages/publications/84871536609

U2 - 10.1142/S0129156412500139

DO - 10.1142/S0129156412500139

M3 - Article

AN - SCOPUS:84871536609

SN - 0129-1564

VL - 21

JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

IS - 1

M1 - 1250013

ER -

InAs_1-xSb_x alloys with native lattice parameters grown on compositionally graded buffers: Structural and optical properties

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Keywords

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