Inelastic tunneling in AlAs-GaAs-AlAs heterostructures

E. E. Mendez; E. Calleja; W. I. Wang

doi:10.1063/1.100046

Inelastic tunneling in AlAs-GaAs-AlAs heterostructures

E. E. Mendez
, E. Calleja
, W. I. Wang

Physics and Astronomy

IBM
Columbia University

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X _AlAs-Γ_GaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.

Original language	English
Pages (from-to)	977-979
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	11
DOIs	https://doi.org/10.1063/1.100046
State	Published - 1988

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10.1063/1.100046

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@article{69ae73be0a414874985fe1a4a0e6ec23,

title = "Inelastic tunneling in AlAs-GaAs-AlAs heterostructures",

abstract = "Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.",

author = "Mendez, \{E. E.\} and E. Calleja and Wang, \{W. I.\}",

year = "1988",

doi = "10.1063/1.100046",

language = "English",

volume = "53",

pages = "977--979",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "11",

}

TY - JOUR

T1 - Inelastic tunneling in AlAs-GaAs-AlAs heterostructures

AU - Mendez, E. E.

AU - Calleja, E.

AU - Wang, W. I.

PY - 1988

Y1 - 1988

N2 - Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.

AB - Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.

UR - https://www.scopus.com/pages/publications/0007320729

U2 - 10.1063/1.100046

DO - 10.1063/1.100046

M3 - Article

AN - SCOPUS:0007320729

SN - 0003-6951

VL - 53

SP - 977

EP - 979

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Inelastic tunneling in AlAs-GaAs-AlAs heterostructures

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