Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures

L. E. Vorobjev; D. A. Firsov; M. Ya Vinnichenko; V. L. Zerova; G. A. Melentyev; M. O. Mashko; L. Shterengas; G. Kipshidze; G. Belenky; T. Hosoda

doi:10.3103/S1062873812020104

Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures

L. E. Vorobjev
, D. A. Firsov
, M. Ya Vinnichenko
, V. L. Zerova
, G. A. Melentyev
, M. O. Mashko
, L. Shterengas
, G. Kipshidze
, G. Belenky
, T. Hosoda

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University
Stony Brook University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Carrier recombination processes, including the Auger recombination, are studied in InGaAsSb/AlGaAsSb quantum well nanostructures. Based on the dynamics of photoluminescence, we estimate the emission time of an optical phonon, determined the recombination rate as a function of optical-excitation intensity, and estimated the coefficient characterizing the rate of the resonance Auger recombination.

Original language	English
Pages (from-to)	211-213
Number of pages	3
Journal	Bulletin of the Russian Academy of Sciences: Physics
Volume	76
Issue number	2
DOIs	https://doi.org/10.3103/S1062873812020104
State	Published - Feb 2012

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Vorobjev, L. E., Firsov, D. A., Vinnichenko, M. Y., Zerova, V. L., Melentyev, G. A., Mashko, M. O., Shterengas, L., Kipshidze, G., Belenky, G., & Hosoda, T. (2012). Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures. Bulletin of the Russian Academy of Sciences: Physics, 76(2), 211-213. https://doi.org/10.3103/S1062873812020104

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title = "Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures",

abstract = "Carrier recombination processes, including the Auger recombination, are studied in InGaAsSb/AlGaAsSb quantum well nanostructures. Based on the dynamics of photoluminescence, we estimate the emission time of an optical phonon, determined the recombination rate as a function of optical-excitation intensity, and estimated the coefficient characterizing the rate of the resonance Auger recombination.",

author = "Vorobjev, \{L. E.\} and Firsov, \{D. A.\} and Vinnichenko, \{M. Ya\} and Zerova, \{V. L.\} and Melentyev, \{G. A.\} and Mashko, \{M. O.\} and L. Shterengas and G. Kipshidze and G. Belenky and T. Hosoda",

year = "2012",

month = feb,

doi = "10.3103/S1062873812020104",

language = "English",

volume = "76",

pages = "211--213",

journal = "Bulletin of the Russian Academy of Sciences: Physics",

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Vorobjev, LE, Firsov, DA, Vinnichenko, MY, Zerova, VL, Melentyev, GA, Mashko, MO, Shterengas, L, Kipshidze, G, Belenky, G & Hosoda, T 2012, 'Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures', Bulletin of the Russian Academy of Sciences: Physics, vol. 76, no. 2, pp. 211-213. https://doi.org/10.3103/S1062873812020104

TY - JOUR

T1 - Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures

AU - Vorobjev, L. E.

AU - Firsov, D. A.

AU - Vinnichenko, M. Ya

AU - Zerova, V. L.

AU - Melentyev, G. A.

AU - Mashko, M. O.

AU - Shterengas, L.

AU - Kipshidze, G.

AU - Belenky, G.

AU - Hosoda, T.

PY - 2012/2

Y1 - 2012/2

N2 - Carrier recombination processes, including the Auger recombination, are studied in InGaAsSb/AlGaAsSb quantum well nanostructures. Based on the dynamics of photoluminescence, we estimate the emission time of an optical phonon, determined the recombination rate as a function of optical-excitation intensity, and estimated the coefficient characterizing the rate of the resonance Auger recombination.

AB - Carrier recombination processes, including the Auger recombination, are studied in InGaAsSb/AlGaAsSb quantum well nanostructures. Based on the dynamics of photoluminescence, we estimate the emission time of an optical phonon, determined the recombination rate as a function of optical-excitation intensity, and estimated the coefficient characterizing the rate of the resonance Auger recombination.

UR - https://www.scopus.com/pages/publications/84859914657

U2 - 10.3103/S1062873812020104

DO - 10.3103/S1062873812020104

M3 - Article

AN - SCOPUS:84859914657

SN - 1062-8738

VL - 76

SP - 211

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JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

IS - 2

ER -

Influence of Auger recombination on the lifetime of nonequilibrium carriers in InGaAsSb/AlGaAsSb quantum well structures

Abstract

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