@inproceedings{81e25f68cfa3414f824e9a931ae8cb80,
title = "Influence of dopant concentration on dislocation distributions in 150mm 4H SiC wafers",
abstract = "Shifts in the spatial distribution of threading dislocations in 150 mm 4H SiC wafers were examined as a response to intentional changes in both the flow of the nitrogen source gas used to control resistivity during bulk crystal growth, and the growth rate. The density of threading edge and screw dislocations was found to be more evenly distributed in wafers produced under a high-growth rate, low-resistivity process. This result corresponded to a flattening of the resistivity distribution, and a \textasciitilde{}34\% reduction in on-and off-facet resistivity differential. The effect was attributed to regularized 4H island coalescence due to modulation of step terrace width.",
keywords = "Defect mapping, KOH etching, Nitrogen doping, Resistivity, Step bunching, Threading edge dislocations, Threading screw dislocations",
author = "Ian Manning and Gilyong Chung and Edward Sanchez and Michael Dudley and Tuerxun Ailihumaer and Jianqiu Guo and Ouloide Goue and Balaji Raghothamachar",
note = "Publisher Copyright: {\textcopyright} 2019 Trans Tech Publications Ltd, Switzerland.; 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 ; Conference date: 02-09-2018 Through 06-09-2018",
year = "2019",
doi = "10.4028/www.scientific.net/MSF.963.60",
language = "English",
isbn = "9783035713329",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "60--63",
editor = "Gammon, \{Peter M.\} and Shah, \{Vishal A.\} and McMahon, \{Richard A.\} and Jennings, \{Michael R.\} and Oliver Vavasour and Mawby, \{Philip A.\} and Faye Padfield",
booktitle = "Silicon Carbide and Related Materials, 2018",
}