Influence of Layout Parasitics and its Optimization in Two-Level Gallium-Nitride Based Current Source Inverter

Mustafeez ul-Hassan; Fang Luo

doi:10.1109/ECCE50734.2022.9947592

Influence of Layout Parasitics and its Optimization in Two-Level Gallium-Nitride Based Current Source Inverter

Mustafeez ul-Hassan
, Fang Luo

Electrical Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Utilization of GaN devices for cryogenic power electronics converters ensures higher efficiency and density. This paper presents an application of GaN device for the development of a low temperature current source inverter (CSI). A detailed investigation about influence of layout parasitics onto switching speed, and device over voltages/currents of a CSI is carried out. The paper also optimizes the commutation power loop by having a “Y” shaped layout for CSI with inductance of 5.25 nH. The design concept is validated with experiments by developing a three phase CSI with GaN high electron mobility transistors (HEMTs), where design of power loop inductance has also been verified.

Original language	English
Title of host publication	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728193878
DOIs	https://doi.org/10.1109/ECCE50734.2022.9947592
State	Published - 2022
Event	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 - Detroit, United States Duration: Oct 9 2022 → Oct 13 2022

Publication series

Name	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022

Conference

Conference	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Country/Territory	United States
City	Detroit
Period	10/9/22 → 10/13/22

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10.1109/ECCE50734.2022.9947592

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ul-Hassan, M., & Luo, F. (2022). Influence of Layout Parasitics and its Optimization in Two-Level Gallium-Nitride Based Current Source Inverter. In 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 (2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE50734.2022.9947592

@inproceedings{6879cf59ace646be97300ea96e39586e,

title = "Influence of Layout Parasitics and its Optimization in Two-Level Gallium-Nitride Based Current Source Inverter",

abstract = "Utilization of GaN devices for cryogenic power electronics converters ensures higher efficiency and density. This paper presents an application of GaN device for the development of a low temperature current source inverter (CSI). A detailed investigation about influence of layout parasitics onto switching speed, and device over voltages/currents of a CSI is carried out. The paper also optimizes the commutation power loop by having a “Y” shaped layout for CSI with inductance of 5.25 nH. The design concept is validated with experiments by developing a three phase CSI with GaN high electron mobility transistors (HEMTs), where design of power loop inductance has also been verified.",

author = "Mustafeez ul-Hassan and Fang Luo",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 ; Conference date: 09-10-2022 Through 13-10-2022",

year = "2022",

doi = "10.1109/ECCE50734.2022.9947592",

language = "English",

series = "2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022",

}

ul-Hassan, M & Luo, F 2022, Influence of Layout Parasitics and its Optimization in Two-Level Gallium-Nitride Based Current Source Inverter. in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Detroit, United States, 10/9/22. https://doi.org/10.1109/ECCE50734.2022.9947592

Influence of Layout Parasitics and its Optimization in Two-Level Gallium-Nitride Based Current Source Inverter. / ul-Hassan, Mustafeez; Luo, Fang.
2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Influence of Layout Parasitics and its Optimization in Two-Level Gallium-Nitride Based Current Source Inverter

AU - ul-Hassan, Mustafeez

AU - Luo, Fang

PY - 2022

Y1 - 2022

N2 - Utilization of GaN devices for cryogenic power electronics converters ensures higher efficiency and density. This paper presents an application of GaN device for the development of a low temperature current source inverter (CSI). A detailed investigation about influence of layout parasitics onto switching speed, and device over voltages/currents of a CSI is carried out. The paper also optimizes the commutation power loop by having a “Y” shaped layout for CSI with inductance of 5.25 nH. The design concept is validated with experiments by developing a three phase CSI with GaN high electron mobility transistors (HEMTs), where design of power loop inductance has also been verified.

AB - Utilization of GaN devices for cryogenic power electronics converters ensures higher efficiency and density. This paper presents an application of GaN device for the development of a low temperature current source inverter (CSI). A detailed investigation about influence of layout parasitics onto switching speed, and device over voltages/currents of a CSI is carried out. The paper also optimizes the commutation power loop by having a “Y” shaped layout for CSI with inductance of 5.25 nH. The design concept is validated with experiments by developing a three phase CSI with GaN high electron mobility transistors (HEMTs), where design of power loop inductance has also been verified.

UR - https://www.scopus.com/pages/publications/85144057776

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DO - 10.1109/ECCE50734.2022.9947592

M3 - Conference contribution

AN - SCOPUS:85144057776

T3 - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022

BT - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022

Y2 - 9 October 2022 through 13 October 2022

ER -

Influence of Layout Parasitics and its Optimization in Two-Level Gallium-Nitride Based Current Source Inverter

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