Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures

Yu B. Vasil'ev; S. D. Suchalkin; S. V. Ivanov; B. Ya Mel'tser; A. F. Tsatsul'nikov; P. V. Neklyudov; P. S. Kop'ev

doi:10.1134/1.1187028

Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures

Yu B. Vasil'ev
, S. D. Suchalkin
, S. V. Ivanov
, B. Ya Mel'tser
, A. F. Tsatsul'nikov
, P. V. Neklyudov
, P. S. Kop'ev

Ioffe Physical Technical Institute

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface.

Original language	English
Pages (from-to)	1071-1073
Number of pages	3
Journal	Semiconductors
Volume	31
Issue number	10
DOIs	https://doi.org/10.1134/1.1187028
State	Published - Oct 1997

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title = "Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures",

abstract = "Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface.",

author = "Vasil'ev, \{Yu B.\} and Suchalkin, \{S. D.\} and Ivanov, \{S. V.\} and Mel'tser, \{B. Ya\} and Tsatsul'nikov, \{A. F.\} and Neklyudov, \{P. V.\} and Kop'ev, \{P. S.\}",

year = "1997",

month = oct,

doi = "10.1134/1.1187028",

language = "English",

volume = "31",

pages = "1071--1073",

journal = "Semiconductors",

issn = "1063-7826",

number = "10",

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T1 - Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures

AU - Vasil'ev, Yu B.

AU - Suchalkin, S. D.

AU - Ivanov, S. V.

AU - Mel'tser, B. Ya

AU - Tsatsul'nikov, A. F.

AU - Neklyudov, P. V.

AU - Kop'ev, P. S.

PY - 1997/10

Y1 - 1997/10

N2 - Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface.

AB - Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface.

UR - https://www.scopus.com/pages/publications/0008316412

U2 - 10.1134/1.1187028

DO - 10.1134/1.1187028

M3 - Article

AN - SCOPUS:0008316412

SN - 1063-7826

VL - 31

SP - 1071

EP - 1073

JO - Semiconductors

JF - Semiconductors

IS - 10

ER -

Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures

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