Infrared emitters and photodetectors with InAsSb bulk active regions

Ding Wang; Youxi Lin; Dmitry Donetsky; Gela Kipshidze; Leon Shterengas; Gregory Belenky; P. Svensson Stefan; L. Sarney Wendy; Harry Hier

doi:10.1117/12.2016082

Infrared emitters and photodetectors with InAsSb bulk active regions

Ding Wang
, Youxi Lin
, Dmitry Donetsky
, Gela Kipshidze
, Leon Shterengas
, Gregory Belenky
, P. Svensson Stefan
, L. Sarney Wendy
, Harry Hier

Electrical Engineering

Stony Brook University
U.S. Army Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Bulk unrelaxed InAsSb alloys with Sb compositions up to 44 % and layer thicknesses up to 3 μm were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T = 13 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T= 80 and 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.

Original language	English
Title of host publication	Infrared Technology and Applications XXXIX
DOIs	https://doi.org/10.1117/12.2016082
State	Published - 2013
Event	39th Infrared Technology and Applications - Baltimore, MD, United States Duration: Apr 29 2013 → May 3 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8704
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	39th Infrared Technology and Applications
Country/Territory	United States
City	Baltimore, MD
Period	04/29/13 → 05/3/13

Keywords

barrier detector
InAsSb
long-wave infrared
metamorphic growth
quantum efficiency

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10.1117/12.2016082

Cite this

Wang, D., Lin, Y., Donetsky, D., Kipshidze, G., Shterengas, L., Belenky, G., Stefan, P. S., Wendy, L. S., & Hier, H. (2013). Infrared emitters and photodetectors with InAsSb bulk active regions. In Infrared Technology and Applications XXXIX Article 870410 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8704). https://doi.org/10.1117/12.2016082

@inproceedings{35b4a591d93247428d49c3b85d408761,

title = "Infrared emitters and photodetectors with InAsSb bulk active regions",

abstract = "Bulk unrelaxed InAsSb alloys with Sb compositions up to 44 \% and layer thicknesses up to 3 μm were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T = 13 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T= 80 and 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.",

keywords = "barrier detector, InAsSb, long-wave infrared, metamorphic growth, quantum efficiency",

author = "Ding Wang and Youxi Lin and Dmitry Donetsky and Gela Kipshidze and Leon Shterengas and Gregory Belenky and Stefan, \{P. Svensson\} and Wendy, \{L. Sarney\} and Harry Hier",

year = "2013",

doi = "10.1117/12.2016082",

language = "English",

isbn = "9780819494955",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Infrared Technology and Applications XXXIX",

note = "39th Infrared Technology and Applications ; Conference date: 29-04-2013 Through 03-05-2013",

}

Wang, D, Lin, Y, Donetsky, D, Kipshidze, G, Shterengas, L, Belenky, G, Stefan, PS, Wendy, LS & Hier, H 2013, Infrared emitters and photodetectors with InAsSb bulk active regions. in Infrared Technology and Applications XXXIX., 870410, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8704, 39th Infrared Technology and Applications, Baltimore, MD, United States, 04/29/13. https://doi.org/10.1117/12.2016082

TY - GEN

T1 - Infrared emitters and photodetectors with InAsSb bulk active regions

AU - Wang, Ding

AU - Lin, Youxi

AU - Donetsky, Dmitry

AU - Kipshidze, Gela

AU - Shterengas, Leon

AU - Belenky, Gregory

AU - Stefan, P. Svensson

AU - Wendy, L. Sarney

AU - Hier, Harry

PY - 2013

Y1 - 2013

N2 - Bulk unrelaxed InAsSb alloys with Sb compositions up to 44 % and layer thicknesses up to 3 μm were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T = 13 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T= 80 and 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.

AB - Bulk unrelaxed InAsSb alloys with Sb compositions up to 44 % and layer thicknesses up to 3 μm were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T = 13 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T= 80 and 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.

KW - barrier detector

KW - InAsSb

KW - long-wave infrared

KW - metamorphic growth

KW - quantum efficiency

UR - https://www.scopus.com/pages/publications/84882443283

U2 - 10.1117/12.2016082

DO - 10.1117/12.2016082

M3 - Conference contribution

AN - SCOPUS:84882443283

SN - 9780819494955

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Infrared Technology and Applications XXXIX

T2 - 39th Infrared Technology and Applications

Y2 - 29 April 2013 through 3 May 2013

ER -

Infrared emitters and photodetectors with InAsSb bulk active regions

Abstract

Publication series

Conference

Keywords

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