Abstract
We have employed ambient-pressure X-ray photoelectron spectroscopy to monitor the full pathway of copper oxidation from the initial stages of oxygen chemisorption on the clean surface to oxide nucleation and growth and then to growing continuous oxide layer. By increasing oxygen pressure in a stepwise way from pO2 = 10-7 to 1 Torr at T = 350 °C, we show that the oxidation of Cu(100) takes place by dissociative chemisorption of oxygen to first form the p(2 × 2) phase at pO2 = 1 × 10-7 Torr, which then transforms to the (22×2)R45° missing-row reconstruction with a higher oxygen coverage and upon increasing pO2 from 1 × 10-6 to 1 × 10-3 Torr. After reaching pO2 = 1 × 10-2 Torr, nucleation and growth of Cu2O islands occurs by consuming the (22×2)R45° regions. Increasing pO2 to 0.1 Torr results in the continued Cu2O growth with increased surface roughness. The surface is quickly covered with a CuO layer upon increasing pO2 to 1 Torr, at which the surface oxidation occurs via the CuO/Cu2O bilayer growth. The measurements delineate the range of pO2 required for the crossover between the different stages of the surface oxidation and may have practical importance by tuning the oxidation conditions that allow for controlling the oxide phase and atomic structure of the surface.
| Original language | English |
|---|---|
| Pages (from-to) | 26519-26527 |
| Number of pages | 9 |
| Journal | Journal of Physical Chemistry C |
| Volume | 122 |
| Issue number | 46 |
| DOIs | |
| State | Published - Nov 21 2018 |
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