Abstract
We report large logarithmic corrections to the conductivity of two-dimensional electrons and holes in GaSb-InAs-GaSb double heterostructures. From 40 mK to 1 K, the conductivity increased with the logarithm of the temperature but with a slope as much as 30 times larger than estimated from the theories of weak localization and carrier interaction. The discrepancy apparently results from electron-hole interactions not included in the theory.
| Original language | English |
|---|---|
| Pages (from-to) | 8848-8850 |
| Number of pages | 3 |
| Journal | Physical Review B |
| Volume | 33 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1986 |
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