Interaction of far-infrared radiation with hot two-dimensional carriers in the quantum wells GaAs/Al1-xGaxAs and Ge/Ge1-xSix

L. E. Vorobjev; D. V. Donetsky; L. E. Golub; V. Ya Aleshkin; O. A. Kuznetsov; L. K. Orlov; A. Kastalsky; E. Towe; D. Sun

Interaction of far-infrared radiation with hot two-dimensional carriers in the quantum wells GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x

L. E. Vorobjev
, D. V. Donetsky
, L. E. Golub
, V. Ya Aleshkin
, O. A. Kuznetsov
, L. K. Orlov
, A. Kastalsky
, E. Towe
, D. Sun

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University

Research output: Contribution to conference › Paper › peer-review

Abstract

The far-infrared emission from p-type GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x structures was examined. This effect was caused by the direct transitions of hot two-dimensional holes between quantum well subbands and modulation of the FIR laser radiation under heating of the 2D holes in quantum wells. FIR emission caused by intraband transitions of hot electrons in n-type quantum well GaAs/AlGaAs was also investigated. The pronounced peaks in the emission of hot holes of GaAs/AlGaAs and Ge/GeSi quantum well structures were in good agreement with the results of the calculations of energy dispersion curves. Calculations of emission and absorption spectra for GaAs/AlGaAs structures at intersubband hole transition were also performed.

Original language	English
Pages	55
Number of pages	1
State	Published - 1996
Event	Proceedings of the 1996 European Quantum Electronics Conference, EQEC'96 - Hamburg, Ger Duration: Sep 8 1996 → Sep 13 1996

Conference

Conference	Proceedings of the 1996 European Quantum Electronics Conference, EQEC'96
City	Hamburg, Ger
Period	09/8/96 → 09/13/96

Cite this

Vorobjev, L. E., Donetsky, D. V., Golub, L. E., Aleshkin, V. Y., Kuznetsov, O. A., Orlov, L. K., Kastalsky, A., Towe, E., & Sun, D. (1996). Interaction of far-infrared radiation with hot two-dimensional carriers in the quantum wells GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x. 55. Paper presented at Proceedings of the 1996 European Quantum Electronics Conference, EQEC'96, Hamburg, Ger.

@conference{fa7e25c0ecdb48aca7734f2ffce84db2,

title = "Interaction of far-infrared radiation with hot two-dimensional carriers in the quantum wells GaAs/Al1-xGaxAs and Ge/Ge1-xSix",

abstract = "The far-infrared emission from p-type GaAs/Al1-xGaxAs and Ge/Ge1-xSix structures was examined. This effect was caused by the direct transitions of hot two-dimensional holes between quantum well subbands and modulation of the FIR laser radiation under heating of the 2D holes in quantum wells. FIR emission caused by intraband transitions of hot electrons in n-type quantum well GaAs/AlGaAs was also investigated. The pronounced peaks in the emission of hot holes of GaAs/AlGaAs and Ge/GeSi quantum well structures were in good agreement with the results of the calculations of energy dispersion curves. Calculations of emission and absorption spectra for GaAs/AlGaAs structures at intersubband hole transition were also performed.",

author = "Vorobjev, \{L. E.\} and Donetsky, \{D. V.\} and Golub, \{L. E.\} and Aleshkin, \{V. Ya\} and Kuznetsov, \{O. A.\} and Orlov, \{L. K.\} and A. Kastalsky and E. Towe and D. Sun",

year = "1996",

language = "English",

pages = "55",

note = "Proceedings of the 1996 European Quantum Electronics Conference, EQEC'96 ; Conference date: 08-09-1996 Through 13-09-1996",

}

Vorobjev, LE, Donetsky, DV, Golub, LE, Aleshkin, VY, Kuznetsov, OA, Orlov, LK, Kastalsky, A, Towe, E & Sun, D 1996, 'Interaction of far-infrared radiation with hot two-dimensional carriers in the quantum wells GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x', Paper presented at Proceedings of the 1996 European Quantum Electronics Conference, EQEC'96, Hamburg, Ger, 09/8/96 - 09/13/96 pp. 55.

TY - CONF

T1 - Interaction of far-infrared radiation with hot two-dimensional carriers in the quantum wells GaAs/Al1-xGaxAs and Ge/Ge1-xSix

AU - Vorobjev, L. E.

AU - Donetsky, D. V.

AU - Golub, L. E.

AU - Aleshkin, V. Ya

AU - Kuznetsov, O. A.

AU - Orlov, L. K.

AU - Kastalsky, A.

AU - Towe, E.

AU - Sun, D.

PY - 1996

Y1 - 1996

N2 - The far-infrared emission from p-type GaAs/Al1-xGaxAs and Ge/Ge1-xSix structures was examined. This effect was caused by the direct transitions of hot two-dimensional holes between quantum well subbands and modulation of the FIR laser radiation under heating of the 2D holes in quantum wells. FIR emission caused by intraband transitions of hot electrons in n-type quantum well GaAs/AlGaAs was also investigated. The pronounced peaks in the emission of hot holes of GaAs/AlGaAs and Ge/GeSi quantum well structures were in good agreement with the results of the calculations of energy dispersion curves. Calculations of emission and absorption spectra for GaAs/AlGaAs structures at intersubband hole transition were also performed.

AB - The far-infrared emission from p-type GaAs/Al1-xGaxAs and Ge/Ge1-xSix structures was examined. This effect was caused by the direct transitions of hot two-dimensional holes between quantum well subbands and modulation of the FIR laser radiation under heating of the 2D holes in quantum wells. FIR emission caused by intraband transitions of hot electrons in n-type quantum well GaAs/AlGaAs was also investigated. The pronounced peaks in the emission of hot holes of GaAs/AlGaAs and Ge/GeSi quantum well structures were in good agreement with the results of the calculations of energy dispersion curves. Calculations of emission and absorption spectra for GaAs/AlGaAs structures at intersubband hole transition were also performed.

UR - https://www.scopus.com/pages/publications/0029767235

M3 - Paper

AN - SCOPUS:0029767235

SP - 55

T2 - Proceedings of the 1996 European Quantum Electronics Conference, EQEC'96

Y2 - 8 September 1996 through 13 September 1996

ER -

Interaction of far-infrared radiation with hot two-dimensional carriers in the quantum wells GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x

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