Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al1-xGaxAs and Ge/Ge1-xSix

V. Ya Aleshkin; L. E. Vorobjev; D. V. Donetsky; T. Dumelow; A. Kastalsky; O. A. Kuznetsov; G. Mirjalili; L. K. Orlov; T. J. Parker; S. Farjami Shayesteh

Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x

V. Ya Aleshkin
, L. E. Vorobjev
, D. V. Donetsky
, T. Dumelow
, A. Kastalsky
, O. A. Kuznetsov
, G. Mirjalili
, L. K. Orlov
, T. J. Parker
, S. Farjami Shayesteh

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University

Research output: Contribution to conference › Paper › peer-review

Abstract

The present work is a study of FIR emission from p-type GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.

Original language	English
Pages	63-64
Number of pages	2
State	Published - 1996
Event	Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS - Anaheim, CA, USA Duration: Jun 2 1996 → Jun 7 1996

Conference

Conference	Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS
City	Anaheim, CA, USA
Period	06/2/96 → 06/7/96

Cite this

Aleshkin, V. Y., Vorobjev, L. E., Donetsky, D. V., Dumelow, T., Kastalsky, A., Kuznetsov, O. A., Mirjalili, G., Orlov, L. K., Parker, T. J., & Shayesteh, S. F. (1996). Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x. 63-64. Paper presented at Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS, Anaheim, CA, USA.

@conference{ce048d78bbbb4d93a9047ec7d75ea9e2,

title = "Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al1-xGaxAs and Ge/Ge1-xSix",

abstract = "The present work is a study of FIR emission from p-type GaAs/Al1-xGaxAs and Ge/Ge1-xSix structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.",

author = "Aleshkin, \{V. Ya\} and Vorobjev, \{L. E.\} and Donetsky, \{D. V.\} and T. Dumelow and A. Kastalsky and Kuznetsov, \{O. A.\} and G. Mirjalili and Orlov, \{L. K.\} and Parker, \{T. J.\} and Shayesteh, \{S. Farjami\}",

year = "1996",

language = "English",

pages = "63--64",

note = "Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS ; Conference date: 02-06-1996 Through 07-06-1996",

}

Aleshkin, VY, Vorobjev, LE, Donetsky, DV, Dumelow, T, Kastalsky, A, Kuznetsov, OA, Mirjalili, G, Orlov, LK, Parker, TJ & Shayesteh, SF 1996, 'Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x', Paper presented at Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS, Anaheim, CA, USA, 06/2/96 - 06/7/96 pp. 63-64.

Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x. / Aleshkin, V. Ya; Vorobjev, L. E.; Donetsky, D. V. et al.
1996. 63-64 Paper presented at Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS, Anaheim, CA, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al1-xGaxAs and Ge/Ge1-xSix

AU - Aleshkin, V. Ya

AU - Vorobjev, L. E.

AU - Donetsky, D. V.

AU - Dumelow, T.

AU - Kastalsky, A.

AU - Kuznetsov, O. A.

AU - Mirjalili, G.

AU - Orlov, L. K.

AU - Parker, T. J.

AU - Shayesteh, S. Farjami

PY - 1996

Y1 - 1996

N2 - The present work is a study of FIR emission from p-type GaAs/Al1-xGaxAs and Ge/Ge1-xSix structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.

AB - The present work is a study of FIR emission from p-type GaAs/Al1-xGaxAs and Ge/Ge1-xSix structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.

UR - https://www.scopus.com/pages/publications/0029710344

M3 - Paper

AN - SCOPUS:0029710344

SP - 63

EP - 64

T2 - Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS

Y2 - 2 June 1996 through 7 June 1996

ER -

Interaction of far-infrared radiation with hot two-dimensional holes in the quantum wells GaAs/Al_1-xGa_xAs and Ge/Ge_1-xSi_x

Abstract

Conference

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