@inproceedings{afb463ea4fab4f29b11263c38885d82c,
title = "Investigation of dislocation behavior at the early stage of PVT-grown 4H-SiC crystals",
abstract = "Dislocation behavior during the early stages of physical vapor transport (PVT) growth of 6-inch diameter 4H-SiC crystals has been investigated by synchrotron monochromatic beam X-ray topography (SMBXT) in conjunction with ray tracing simulations of dislocation images. Our studies reveal that most of the TSDs/TMDs are replicated into the newly grown layer while most TEDs are generated by either nucleation in pairs at the growth interface or by redirection of BPDs in the seed crystal. Most BPDs in the newly grown layer are of screw type with b =1/3[1120] and this has been verified by comparison with ray tracing simulated images. TEDs with same and opposite sign of Burgers vector are found to be deflected on to the same basal plane by the overgrowth of macro-steps and they glide in the same and opposite directions respectively. TMDs deflected on to the basal plane by macro-steps get dissociated into c and a components, with the a segment undergoing glide to form V-shaped configurations.",
keywords = "4H-SiC crystals, Dislocations, PVT growth, Ray tracing simulation, Synchrotron X-ray topography",
author = "Tuerxun Ailihumaer and Balaji Raghothamachar and Michael Dudley and Gilyong Chung and Ian Manning and Edward Sanchez",
note = "Publisher Copyright: {\textcopyright} 2020 Trans Tech Publications Ltd, Switzerland.; 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 ; Conference date: 29-09-2019 Through 04-10-2019",
year = "2020",
doi = "10.4028/www.scientific.net/MSF.1004.44",
language = "English",
isbn = "9783035715798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "44--50",
editor = "Hiroshi Yano and Takeshi Ohshima and Kazuma Eto and Takeshi Mitani and Shinsuke Harada and Yasunori Tanaka",
booktitle = "Silicon Carbide and Related Materials 2019",
}