TY - GEN
T1 - Investigation of filamentation damage resulting from electromagnetic breakdown in Si Bi-polar diodes
AU - Wang, S.
AU - Dudley, M.
AU - Fazi, C.
AU - Gordon-Smith, D.
PY - 1993
Y1 - 1993
N2 - Synchrotron white beam X-ray topographic studies of damage induced during the R-F electromagnetic breakdown of bi-polar diodes on silicon have been carried out. Filaments associated with damage processes in reverse bias, have been observed close to the surface of the Si epilayer, using the surface sensitive grazing Bragg-Laue technique. Ray-tracing experiments have enabled us to determine the exact lateral location of the filament to be at the edge of the metallization region, at the junction between it and the metallic contact. The influence of these results on hardening technologies is discussed.
AB - Synchrotron white beam X-ray topographic studies of damage induced during the R-F electromagnetic breakdown of bi-polar diodes on silicon have been carried out. Filaments associated with damage processes in reverse bias, have been observed close to the surface of the Si epilayer, using the surface sensitive grazing Bragg-Laue technique. Ray-tracing experiments have enabled us to determine the exact lateral location of the filament to be at the edge of the metallization region, at the junction between it and the metallic contact. The influence of these results on hardening technologies is discussed.
UR - https://www.scopus.com/pages/publications/0027252199
U2 - 10.1557/proc-307-237
DO - 10.1557/proc-307-237
M3 - Conference contribution
AN - SCOPUS:0027252199
SN - 1558992030
SN - 9781558992030
T3 - Materials Research Society Symposium Proceedings
SP - 237
EP - 242
BT - Applications of Synchrotron Radiation Techniques to Materials Science
PB - Publ by Materials Research Society
T2 - Materials Research Society Spring Meeting
Y2 - 12 April 1993 through 15 April 1993
ER -