IR and RBS spectroscopy investigation of semi‐insulating phosphorus‐doped polycrystalline silicon layers

W. Andrá; G. Götz; H. Hobert; V. Misyuchenko; V. A. Samuilov; V. Stelmakh

doi:10.1002/pssa.2211100117

IR and RBS spectroscopy investigation of semi‐insulating phosphorus‐doped polycrystalline silicon layers

W. Andrá
, G. Götz
, H. Hobert
, V. Misyuchenko
, V. A. Samuilov
, V. Stelmakh

Materials Science and Engineering

Friedrich Schiller University Jena
Belarusian State University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Oxygenated polycrystalline silicon films containing different oxygen contents are ion‐implanted with phosphorus atoms. The films are either furnace annealed at 1073 and 1173 K, respectively, for 15 min or rapidly thermally annealed by halogen lamps in the temperature range from 1073 to 1373 K with annealing times between 6 and 40 s. Rutherford backscattering spectrometry (RBS) and IR spectrometry are carried out to determine the oxygen content and the free carrier concentration. The annealing eauses structure densification of SIPOS films. Short‐time annealing (10 s) gives the highest free carrier concentration.

Original language	English
Pages (from-to)	181-187
Number of pages	7
Journal	physica status solidi (a)
Volume	110
Issue number	1
DOIs	https://doi.org/10.1002/pssa.2211100117
State	Published - Nov 16 1988

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abstract = "Oxygenated polycrystalline silicon films containing different oxygen contents are ion‐implanted with phosphorus atoms. The films are either furnace annealed at 1073 and 1173 K, respectively, for 15 min or rapidly thermally annealed by halogen lamps in the temperature range from 1073 to 1373 K with annealing times between 6 and 40 s. Rutherford backscattering spectrometry (RBS) and IR spectrometry are carried out to determine the oxygen content and the free carrier concentration. The annealing eauses structure densification of SIPOS films. Short‐time annealing (10 s) gives the highest free carrier concentration.",

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T1 - IR and RBS spectroscopy investigation of semi‐insulating phosphorus‐doped polycrystalline silicon layers

AU - Andrá, W.

AU - Götz, G.

AU - Hobert, H.

AU - Misyuchenko, V.

AU - Samuilov, V. A.

AU - Stelmakh, V.

PY - 1988/11/16

Y1 - 1988/11/16

N2 - Oxygenated polycrystalline silicon films containing different oxygen contents are ion‐implanted with phosphorus atoms. The films are either furnace annealed at 1073 and 1173 K, respectively, for 15 min or rapidly thermally annealed by halogen lamps in the temperature range from 1073 to 1373 K with annealing times between 6 and 40 s. Rutherford backscattering spectrometry (RBS) and IR spectrometry are carried out to determine the oxygen content and the free carrier concentration. The annealing eauses structure densification of SIPOS films. Short‐time annealing (10 s) gives the highest free carrier concentration.

AB - Oxygenated polycrystalline silicon films containing different oxygen contents are ion‐implanted with phosphorus atoms. The films are either furnace annealed at 1073 and 1173 K, respectively, for 15 min or rapidly thermally annealed by halogen lamps in the temperature range from 1073 to 1373 K with annealing times between 6 and 40 s. Rutherford backscattering spectrometry (RBS) and IR spectrometry are carried out to determine the oxygen content and the free carrier concentration. The annealing eauses structure densification of SIPOS films. Short‐time annealing (10 s) gives the highest free carrier concentration.

UR - https://www.scopus.com/pages/publications/84990635814

U2 - 10.1002/pssa.2211100117

DO - 10.1002/pssa.2211100117

M3 - Article

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SN - 0031-8965

VL - 110

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EP - 187

JO - physica status solidi (a)

JF - physica status solidi (a)

IS - 1

ER -

IR and RBS spectroscopy investigation of semi‐insulating phosphorus‐doped polycrystalline silicon layers

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