Laser-assisted nanoprocessing and growth of semiconductor nanostructures

Recent research results are presented where lasers of different pulse durations and wavelengths have been coupled to near-field-scanning optical microscopes (NSOMs) through apertured bent cantilever fiber probes and atomic force microscope (AFM) tips in apertureless configurations. Experiments have been conducted on the surface modification of metals and semiconductor materials. By combining nanoscale ablative material removal with subsequent chemical etching steps, ablation nanolithography and patterning of fused silica and crystalline silicon wafers has been demonstrated. Confinement of laser-induced crystallization to nanometric scales has also been shown. In-situ observation of the nanoscale materials modification was conducted by coupling the NSOM tips with a scanning electron microscope (SEM). Nucleation and growth of semiconductor materials have been achieved by laser chemical vapor deposition (LCVD) at the nanoscale level. Locally selective growth of crystalline silicon nanowires with controlled size, heterogeneity and nanometric placement accuracy has been accomplished.