Laser assisted plasma enhanced chemical vapor deposition for damage-resistive and reliable thin film encapsulation of organic light emitting diodes

Kunsik An; Ho Nyun Lee; Kwan Hyun Cho; Seung Woo Lee; Sung Hwan Choi; David J. Hwang; Kyung Tae Kang

doi:10.1002/sdtp.14192

Laser assisted plasma enhanced chemical vapor deposition for damage-resistive and reliable thin film encapsulation of organic light emitting diodes

Kunsik An
, Ho Nyun Lee
, Kwan Hyun Cho
, Seung Woo Lee
, Sung Hwan Choi
, David J. Hwang
, Kyung Tae Kang

Mechanical Engineering

Korea Institute of Industrial Technology
Hanyang University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Silicon nitride thin film was fabricated using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) with 193 nm ArF excimer laser. In order to achieve damage-resistive and reliable thin film encapsulation, the deposition of silicon nitride was performed in two-step that laser-assisted CVD (LACVD) and LAPECVD performed on the LACVD thin film.

Original language	English
Pages (from-to)	1572-1575
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	51
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.14192
State	Published - 2020
Event	57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online Duration: Aug 3 2020 → Aug 7 2020

Keywords

Chemical vapor deposition
Laser assisted plasma enhanced chemical vapor deposition
Oled encapsulation
Thin film encapsulation

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10.1002/sdtp.14192

Cite this

@article{f1886911ca8c44bd91c43c4b37686eac,

title = "Laser assisted plasma enhanced chemical vapor deposition for damage-resistive and reliable thin film encapsulation of organic light emitting diodes",

abstract = "Silicon nitride thin film was fabricated using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) with 193 nm ArF excimer laser. In order to achieve damage-resistive and reliable thin film encapsulation, the deposition of silicon nitride was performed in two-step that laser-assisted CVD (LACVD) and LAPECVD performed on the LACVD thin film.",

keywords = "Chemical vapor deposition, Laser assisted plasma enhanced chemical vapor deposition, Oled encapsulation, Thin film encapsulation",

author = "Kunsik An and Lee, \{Ho Nyun\} and Cho, \{Kwan Hyun\} and Lee, \{Seung Woo\} and Choi, \{Sung Hwan\} and Hwang, \{David J.\} and Kang, \{Kyung Tae\}",

note = "Publisher Copyright: {\textcopyright} 2020 SID.; 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 ; Conference date: 03-08-2020 Through 07-08-2020",

year = "2020",

doi = "10.1002/sdtp.14192",

language = "English",

volume = "51",

pages = "1572--1575",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "1",

}

Laser assisted plasma enhanced chemical vapor deposition for damage-resistive and reliable thin film encapsulation of organic light emitting diodes. / An, Kunsik; Lee, Ho Nyun; Cho, Kwan Hyun et al.
In: Digest of Technical Papers - SID International Symposium, Vol. 51, No. 1, 2020, p. 1572-1575.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Laser assisted plasma enhanced chemical vapor deposition for damage-resistive and reliable thin film encapsulation of organic light emitting diodes

AU - An, Kunsik

AU - Lee, Ho Nyun

AU - Cho, Kwan Hyun

AU - Lee, Seung Woo

AU - Choi, Sung Hwan

AU - Hwang, David J.

AU - Kang, Kyung Tae

PY - 2020

Y1 - 2020

N2 - Silicon nitride thin film was fabricated using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) with 193 nm ArF excimer laser. In order to achieve damage-resistive and reliable thin film encapsulation, the deposition of silicon nitride was performed in two-step that laser-assisted CVD (LACVD) and LAPECVD performed on the LACVD thin film.

AB - Silicon nitride thin film was fabricated using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) with 193 nm ArF excimer laser. In order to achieve damage-resistive and reliable thin film encapsulation, the deposition of silicon nitride was performed in two-step that laser-assisted CVD (LACVD) and LAPECVD performed on the LACVD thin film.

KW - Chemical vapor deposition

KW - Laser assisted plasma enhanced chemical vapor deposition

KW - Oled encapsulation

KW - Thin film encapsulation

UR - https://www.scopus.com/pages/publications/85094216259

U2 - 10.1002/sdtp.14192

DO - 10.1002/sdtp.14192

M3 - Conference article

AN - SCOPUS:85094216259

SN - 0097-966X

VL - 51

SP - 1572

EP - 1575

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020

Y2 - 3 August 2020 through 7 August 2020

ER -

Laser assisted plasma enhanced chemical vapor deposition for damage-resistive and reliable thin film encapsulation of organic light emitting diodes

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Keywords

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