@inproceedings{a2dac3e95bb341369807635b89774fc6,
title = "Lateral growth expansion of 4H/6H-SiC m-plane pseudo fiber crystals by hot wall CVD epitaxy",
abstract = "Lateral expansion of small mixed polytype 4H/6H-SiC and 6H-SiC slivers was realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented (1{\=1}00) SiC boule slices containing regions of 4H and 6H-SiC or just single polytype 6H-SiC were exposed to HWCVD conditions using standard silane/propane chemistry for a period of up to eight hours. The slivers exhibited approximately 1500 μm (1.5 mm) of total lateral expansion. Initial analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the lateral growth was homoepitaxial, matching the polytype of the respective underlying region of the seed sliver.",
keywords = "A-face, A-plane, CVD, Epitaxy, Hot wall, M-face, M-plane",
author = "Trunek, \{Andrew J.\} and Neudeck, \{Philip G.\} and Woodworth, \{Andrew A.\} and Powell, \{J. A.\} and Spry, \{David J.\} and Balaji Raghothamachar and Michael Dudley",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.33",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "33--36",
editor = "Devaty, \{Robert P.\} and Michael Dudley and Chow, \{T. Paul\} and Neudeck, \{Philip G.\}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}