Lattice parameter engineering for III-V long wave infrared photonics

G. Belenky; Y. Lin; L. Shterengas; D. Donetsky; G. Kipshidze; S. Suchalkin

doi:10.1049/el.2015.2572

Lattice parameter engineering for III-V long wave infrared photonics

G. Belenky
, Y. Lin
, L. Shterengas
, D. Donetsky
, G. Kipshidze
, S. Suchalkin

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition and well-regulated band alignments are reported. The bandgap energy of ordered alloy can be much smaller than that in bulk InAsSb with any Sb content. The modulation period is determined by the thicknesses of the strain compensated InAsSb_x/InAsSb_y pairs grown on a virtual GaIn_zSb substrate with a given lattice constant. The experiment shows that the deviation of the modulation period from ∼2.3 to ∼5.5 nm leads to the shift of the maximum of 20 K photoluminescence from 12.9 to 19.6 μm. It is concluded that the growth of strain compensated InAsSb_x/InAsSb_y on virtual substrates allows developing narrow bandgap III-V materials with various bandgap energies.

Original language	English
Pages (from-to)	1521-1522
Number of pages	2
Journal	Electronics Letters
Volume	51
Issue number	19
DOIs	https://doi.org/10.1049/el.2015.2572
State	Published - Sep 17 2015

Access to Document

10.1049/el.2015.2572

Cite this

@article{00e4469319c14926a7b3437f507e7e2b,

title = "Lattice parameter engineering for III-V long wave infrared photonics",

abstract = "The design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition and well-regulated band alignments are reported. The bandgap energy of ordered alloy can be much smaller than that in bulk InAsSb with any Sb content. The modulation period is determined by the thicknesses of the strain compensated InAsSbx/InAsSby pairs grown on a virtual GaInzSb substrate with a given lattice constant. The experiment shows that the deviation of the modulation period from ∼2.3 to ∼5.5 nm leads to the shift of the maximum of 20 K photoluminescence from 12.9 to 19.6 μm. It is concluded that the growth of strain compensated InAsSbx/InAsSby on virtual substrates allows developing narrow bandgap III-V materials with various bandgap energies.",

author = "G. Belenky and Y. Lin and L. Shterengas and D. Donetsky and G. Kipshidze and S. Suchalkin",

year = "2015",

month = sep,

day = "17",

doi = "10.1049/el.2015.2572",

language = "English",

volume = "51",

pages = "1521--1522",

journal = "Electronics Letters",

issn = "0013-5194",

number = "19",

}

TY - JOUR

T1 - Lattice parameter engineering for III-V long wave infrared photonics

AU - Belenky, G.

AU - Lin, Y.

AU - Shterengas, L.

AU - Donetsky, D.

AU - Kipshidze, G.

AU - Suchalkin, S.

PY - 2015/9/17

Y1 - 2015/9/17

N2 - The design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition and well-regulated band alignments are reported. The bandgap energy of ordered alloy can be much smaller than that in bulk InAsSb with any Sb content. The modulation period is determined by the thicknesses of the strain compensated InAsSbx/InAsSby pairs grown on a virtual GaInzSb substrate with a given lattice constant. The experiment shows that the deviation of the modulation period from ∼2.3 to ∼5.5 nm leads to the shift of the maximum of 20 K photoluminescence from 12.9 to 19.6 μm. It is concluded that the growth of strain compensated InAsSbx/InAsSby on virtual substrates allows developing narrow bandgap III-V materials with various bandgap energies.

AB - The design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition and well-regulated band alignments are reported. The bandgap energy of ordered alloy can be much smaller than that in bulk InAsSb with any Sb content. The modulation period is determined by the thicknesses of the strain compensated InAsSbx/InAsSby pairs grown on a virtual GaInzSb substrate with a given lattice constant. The experiment shows that the deviation of the modulation period from ∼2.3 to ∼5.5 nm leads to the shift of the maximum of 20 K photoluminescence from 12.9 to 19.6 μm. It is concluded that the growth of strain compensated InAsSbx/InAsSby on virtual substrates allows developing narrow bandgap III-V materials with various bandgap energies.

UR - https://www.scopus.com/pages/publications/84942162889

U2 - 10.1049/el.2015.2572

DO - 10.1049/el.2015.2572

M3 - Article

AN - SCOPUS:84942162889

SN - 0013-5194

VL - 51

SP - 1521

EP - 1522

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

Lattice parameter engineering for III-V long wave infrared photonics

Abstract

Access to Document

Other files and links

Fingerprint

Cite this