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Level repulsion of localized excitons in disordered quantum wells

  • G. Aichmayr
  • , L. Viña
  • , S. P. Kennedy
  • , R. T. Phillips
  • , E. E. Mendez
  • Universidad Autónoma de Madrid
  • University of Cambridge

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

The spectral autocorrelation for a set of over 400 near-field photoluminescence spectra of a narrow quantum well has been evaluated. It is compared with a microscopic model of an exciton in a disorder potential. The analysis provides strong evidence for quantum mechanical level repulsion and allows a quantitative estimate of the microscopic disorder features. The concept of participation ratio is invoked to quantify the exciton center-of-mass localization lengths. These turn out to be broadly distributed and increase rapidly with energy.

Original languageEnglish
Pages (from-to)625-629
Number of pages5
Journalphysica status solidi (a)
Volume190
Issue number3
DOIs
StatePublished - Apr 2002
Event7th International Conference on Optics and Excitons in Confined Systems (OECS7) - Montpellier, France
Duration: Sep 3 2001Sep 7 2001

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