Abstract
Light-emitting diodes emitting near 2 \mu{\rm m} producing quasi-continuous wave optical power of {>}{\rm 10}~{\rm mW} at room temperature have been demonstrated. The combination of a strain-engineered quantum well active region and a cascaded injection scheme made it possible to achieve an internal efficiency of 120%. The higher wall plug efficiency of the two-cascade devices indicates that Auger recombination is primarily responsible for the efficiency drop at high injection levels.
| Original language | English |
|---|---|
| Article number | 6632895 |
| Pages (from-to) | 2278-2280 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 25 |
| Issue number | 23 |
| DOIs | |
| State | Published - 2013 |
Keywords
- Cascading active region
- GaSb
- infrared
- LEDs
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