Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers

Leon Shterengas; Jeng Ya Yeh; Luke J. Mawst; Nelson Tansu; Gregory Belenky

Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers

Leon Shterengas
, Jeng Ya Yeh
, Luke J. Mawst
, Nelson Tansu
, Gregory Belenky

Electrical Engineering

University of Wisconsin-Madison
Lehigh University
Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Gain, loss and a-factor were measured in broad stripe 1.23μm InGaAs and 1.29μm InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and a-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers.

Original language	English
Pages (from-to)	615-616
Number of pages	2
Journal	OSA Trends in Optics and Photonics Series
Volume	96 A
State	Published - 2004
Event	Conference on Lasers and Electro-Optics, CLEO - Washington, DC, United States Duration: May 17 2004 → May 19 2004

Cite this

@article{23af8e3d1fb8431caf9a0d8779f00864,

title = "Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers",

abstract = "Gain, loss and a-factor were measured in broad stripe 1.23μm InGaAs and 1.29μm InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and a-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers.",

author = "Leon Shterengas and Yeh, \{Jeng Ya\} and Mawst, \{Luke J.\} and Nelson Tansu and Gregory Belenky",

year = "2004",

language = "English",

volume = "96 A",

pages = "615--616",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Conference on Lasers and Electro-Optics, CLEO ; Conference date: 17-05-2004 Through 19-05-2004",

}

TY - JOUR

T1 - Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers

AU - Shterengas, Leon

AU - Yeh, Jeng Ya

AU - Mawst, Luke J.

AU - Tansu, Nelson

AU - Belenky, Gregory

PY - 2004

Y1 - 2004

N2 - Gain, loss and a-factor were measured in broad stripe 1.23μm InGaAs and 1.29μm InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and a-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers.

AB - Gain, loss and a-factor were measured in broad stripe 1.23μm InGaAs and 1.29μm InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and a-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers.

UR - https://www.scopus.com/pages/publications/33645215253

M3 - Conference article

AN - SCOPUS:33645215253

SN - 1094-5695

VL - 96 A

SP - 615

EP - 616

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - Conference on Lasers and Electro-Optics, CLEO

Y2 - 17 May 2004 through 19 May 2004

ER -

Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers

Abstract

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