Abstract
The performance of silicon detectors irradiated with a fluence of 1.2×1014 cm-2 1 MeV neutrons and the radiation-induced lattice disorder have been analyzed in the low-temperature range down to 4.2 K. The results demonstrate that heavily irradiated silicon detectors could match the exceptional radiation hardness of a Josephson tunnel junction electronics in a hybrid superconducting pixel detector scheme used as an ultra-fast radiation-hard cryogenic tracking device.
| Original language | English |
|---|---|
| Pages (from-to) | 56-60 |
| Number of pages | 5 |
| Journal | Nuclear Inst. and Methods in Physics Research, A |
| Volume | 426 |
| Issue number | 1 |
| DOIs | |
| State | Published - Apr 21 1999 |
| Event | Proceedings of the 1998 2nd International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices - Firenze, Italy Duration: Mar 4 1998 → Mar 6 1998 |
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