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Liquid He cooled silicon for radiation-hard hybrid superconducting pixel detectors

  • V. G. Palmieri
  • , E. Borchi
  • , L. Casagrande
  • , C. Da Via
  • , A. Esposito
  • , S. Pagano
  • , S. Pirollo
  • University of Bern
  • University of Florence
  • Laboratório de Instrumentação e Física Experimental de Partículas
  • National Institute of Advanced Industrial Science and Technology
  • National Research Council of Italy

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The performance of silicon detectors irradiated with a fluence of 1.2×1014 cm-2 1 MeV neutrons and the radiation-induced lattice disorder have been analyzed in the low-temperature range down to 4.2 K. The results demonstrate that heavily irradiated silicon detectors could match the exceptional radiation hardness of a Josephson tunnel junction electronics in a hybrid superconducting pixel detector scheme used as an ultra-fast radiation-hard cryogenic tracking device.

Original languageEnglish
Pages (from-to)56-60
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, A
Volume426
Issue number1
DOIs
StatePublished - Apr 21 1999
EventProceedings of the 1998 2nd International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices - Firenze, Italy
Duration: Mar 4 1998Mar 6 1998

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