Local structure and bonding of Er in GaN: A contrast with Er in Si

P. H. Citrin; P. A. Northrup; R. Birkhahn; A. J. Steckl

doi:10.1063/1.126499

Local structure and bonding of Er in GaN: A contrast with Er in Si

P. H. Citrin
, P. A. Northrup
, R. Birkhahn
, A. J. Steckl

Geosciences

Lucent Technologies
University of Cincinnati

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. %) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si.

Original language	English
Pages (from-to)	2865-2867
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	20
DOIs	https://doi.org/10.1063/1.126499
State	Published - May 15 2000

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title = "Local structure and bonding of Er in GaN: A contrast with Er in Si",

abstract = "X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. \%) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si.",

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T2 - A contrast with Er in Si

AU - Citrin, P. H.

AU - Northrup, P. A.

AU - Birkhahn, R.

AU - Steckl, A. J.

PY - 2000/5/15

Y1 - 2000/5/15

N2 - X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. %) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si.

AB - X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. %) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si.

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U2 - 10.1063/1.126499

DO - 10.1063/1.126499

M3 - Article

AN - SCOPUS:0001316779

SN - 0003-6951

VL - 76

SP - 2865

EP - 2867

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Local structure and bonding of Er in GaN: A contrast with Er in Si

Abstract

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