Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si

P. H. Citrin; P. A. Northrup; R. Birkhahn; A. J. Steckl

doi:10.1109/SIM.2000.939189

Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si

P. H. Citrin
, P. A. Northrup
, R. Birkhahn
, A. J. Steckl

Geosciences

Nokia
University of Cincinnati

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. percent) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si.

Original language	English
Title of host publication	2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Editors	N. J. Welham, C. Jagadish
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15-22
Number of pages	8
ISBN (Electronic)	0780358147
DOIs	https://doi.org/10.1109/SIM.2000.939189
State	Published - 2000
Event	11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia Duration: Jul 3 2000 → Jul 7 2000

Publication series

Name	IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Volume	2000-January

Conference

Conference	11th International Semiconducting and Insulating Materials Conference, SIMC 2000
Country/Territory	Australia
City	Canberra
Period	07/3/00 → 07/7/00

Keywords

Atomic measurements
Bonding
Electroluminescence
Electromagnetic wave absorption
Erbium
Gallium nitride
Luminescence
Optical films
Optical sensors
Temperature

Access to Document

10.1109/SIM.2000.939189

Cite this

Citrin, P. H., Northrup, P. A., Birkhahn, R., & Steckl, A. J. (2000). Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si. In N. J. Welham, & C. Jagadish (Eds.), 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000 (pp. 15-22). Article 939189 (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC; Vol. 2000-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIM.2000.939189

Citrin, P. H. ; Northrup, P. A. ; Birkhahn, R. et al. / Local structure and bonding of luminescent Er in GaN : A contrast with Er in Si. 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. editor / N. J. Welham ; C. Jagadish. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 15-22 (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC).

@inproceedings{4803ef0d775f4bb8bb0cf4e1a83e02fc,

title = "Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si",

abstract = "X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. percent) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si.",

keywords = "Atomic measurements, Bonding, Electroluminescence, Electromagnetic wave absorption, Erbium, Gallium nitride, Luminescence, Optical films, Optical sensors, Temperature",

author = "Citrin, \{P. H.\} and Northrup, \{P. A.\} and R. Birkhahn and Steckl, \{A. J.\}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 11th International Semiconducting and Insulating Materials Conference, SIMC 2000 ; Conference date: 03-07-2000 Through 07-07-2000",

year = "2000",

doi = "10.1109/SIM.2000.939189",

language = "English",

series = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "15--22",

editor = "Welham, \{N. J.\} and C. Jagadish",

booktitle = "2000 International Semiconducting and Insulating Materials Conference, SIMC 2000",

}

Citrin, PH, Northrup, PA, Birkhahn, R & Steckl, AJ 2000, Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si. in NJ Welham & C Jagadish (eds), 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000., 939189, IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, vol. 2000-January, Institute of Electrical and Electronics Engineers Inc., pp. 15-22, 11th International Semiconducting and Insulating Materials Conference, SIMC 2000, Canberra, Australia, 07/3/00. https://doi.org/10.1109/SIM.2000.939189

Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si. / Citrin, P. H.; Northrup, P. A.; Birkhahn, R. et al.
2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. ed. / N. J. Welham; C. Jagadish. Institute of Electrical and Electronics Engineers Inc., 2000. p. 15-22 939189 (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC; Vol. 2000-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Local structure and bonding of luminescent Er in GaN

T2 - 11th International Semiconducting and Insulating Materials Conference, SIMC 2000

AU - Citrin, P. H.

AU - Northrup, P. A.

AU - Birkhahn, R.

AU - Steckl, A. J.

PY - 2000

Y1 - 2000

N2 - X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. percent) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si.

AB - X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. percent) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si.

KW - Atomic measurements

KW - Bonding

KW - Electroluminescence

KW - Electromagnetic wave absorption

KW - Erbium

KW - Gallium nitride

KW - Luminescence

KW - Optical films

KW - Optical sensors

KW - Temperature

UR - https://www.scopus.com/pages/publications/84950142652

U2 - 10.1109/SIM.2000.939189

DO - 10.1109/SIM.2000.939189

M3 - Conference contribution

AN - SCOPUS:84950142652

T3 - IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

SP - 15

EP - 22

BT - 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000

A2 - Welham, N. J.

A2 - Jagadish, C.

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 3 July 2000 through 7 July 2000

ER -

Citrin PH, Northrup PA, Birkhahn R, Steckl AJ. Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si. In Welham NJ, Jagadish C, editors, 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 15-22. 939189. (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC). doi: 10.1109/SIM.2000.939189

Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si

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Keywords

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