TY - GEN
T1 - Low-signature Cadmium Zinc Telluride CZT defect inspection by IR, ultrasound, etch pit density, and x-ray topography
AU - Andreini, Kristian
AU - Tkaczyk, J. Eric
AU - Zhang, Tan
AU - Williams, Yana Z.
AU - Nafis, Chris
AU - Abramovich, Gil
AU - Harding, Kevin
AU - Bednarczyk, Peter J.
AU - Chen, Henry
AU - Bindley, Glenn
AU - McKenzie, Jason
AU - Ragothomachar, Balaji
AU - Dudley, Michael
PY - 2010
Y1 - 2010
N2 - Widespread utilization of Cadmium Zinc Telluride (CZT) in nuclear radiation detectors is currently limited by the cost of high spectroscopic quality material. Yield of devices is limited by non-uniformity in the charge collection efficiency associated crystal defects that occur during synthesis. An inspection method suitable for grading CZT parts during an early stage of device manufacturing is sought. We have implemented a combination of UT and IR imaging of CZT wafers that is successful to map sub-grain boundaries, twins and tellurium inclusions greater than 10-micron diameter. However, point defects and dislocations are below the imaging resolution of the system. It is the goal of this system to study defect density in UT and IR clear areas of CZT wafers and establish an opportunity for low signature defect mapping.
AB - Widespread utilization of Cadmium Zinc Telluride (CZT) in nuclear radiation detectors is currently limited by the cost of high spectroscopic quality material. Yield of devices is limited by non-uniformity in the charge collection efficiency associated crystal defects that occur during synthesis. An inspection method suitable for grading CZT parts during an early stage of device manufacturing is sought. We have implemented a combination of UT and IR imaging of CZT wafers that is successful to map sub-grain boundaries, twins and tellurium inclusions greater than 10-micron diameter. However, point defects and dislocations are below the imaging resolution of the system. It is the goal of this system to study defect density in UT and IR clear areas of CZT wafers and establish an opportunity for low signature defect mapping.
UR - https://www.scopus.com/pages/publications/79960304276
U2 - 10.1109/NSSMIC.2010.5874497
DO - 10.1109/NSSMIC.2010.5874497
M3 - Conference contribution
AN - SCOPUS:79960304276
SN - 9781424491063
T3 - IEEE Nuclear Science Symposium Conference Record
SP - 3666
EP - 3673
BT - IEEE Nuclear Science Symposuim and Medical Imaging Conference, NSS/MIC 2010
T2 - 2010 IEEE Nuclear Science Symposium, Medical Imaging Conference, NSS/MIC 2010 and 17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, RTSD 2010
Y2 - 30 October 2010 through 6 November 2010
ER -