Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition

Seungkuk Kuk; Jongmin Park; Tao Zhang; David J. Hwang

doi:10.1117/12.2251269

Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition

Seungkuk Kuk
, Jongmin Park
, Tao Zhang
, David J. Hwang

Mechanical Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this study, silicon nitride film is deposited by laser assisted chemical vapor deposition technique based on the direct photolysis of SiH₄/NH₃ gas mixture using argon fluoride excimer laser of 193 nm wavelength at low substrate temperature around 100°C. By illuminating laser beam in parallel to sample surface, sample damage or heating can be avoided allowing compatibility of temperature sensitive device architectures. A wide range of processing parameters for laser and reactant gases are examined in correlation with deposition mechanisms.

Original language	English
Title of host publication	Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII
Editors	Beat Neuenschwander, Tetsuya Makimura, Costas P. Grigoropoulos, Gediminas Raciukaitis
Publisher	SPIE
ISBN (Electronic)	9781510606234
DOIs	https://doi.org/10.1117/12.2251269
State	Published - 2017
Event	Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII 2017 - San Francisco, United States Duration: Jan 30 2017 → Feb 2 2017

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10091
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII 2017
Country/Territory	United States
City	San Francisco
Period	01/30/17 → 02/2/17

Keywords

Excimer laser
Laser assisted chemical vapor deposition
Low substrate temperature
Silicon nitride film

Access to Document

10.1117/12.2251269

Cite this

Kuk, S., Park, J., Zhang, T., & Hwang, D. J. (2017). Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition. In B. Neuenschwander, T. Makimura, C. P. Grigoropoulos, & G. Raciukaitis (Eds.), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII Article 1009110 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10091). SPIE. https://doi.org/10.1117/12.2251269

Kuk, Seungkuk ; Park, Jongmin ; Zhang, Tao et al. / Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII. editor / Beat Neuenschwander ; Tetsuya Makimura ; Costas P. Grigoropoulos ; Gediminas Raciukaitis. SPIE, 2017. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{7cd88c4701dc452b9480e9f3a3c88838,

title = "Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition",

abstract = "In this study, silicon nitride film is deposited by laser assisted chemical vapor deposition technique based on the direct photolysis of SiH4/NH3 gas mixture using argon fluoride excimer laser of 193 nm wavelength at low substrate temperature around 100°C. By illuminating laser beam in parallel to sample surface, sample damage or heating can be avoided allowing compatibility of temperature sensitive device architectures. A wide range of processing parameters for laser and reactant gases are examined in correlation with deposition mechanisms.",

keywords = "Excimer laser, Laser assisted chemical vapor deposition, Low substrate temperature, Silicon nitride film",

author = "Seungkuk Kuk and Jongmin Park and Tao Zhang and Hwang, \{David J.\}",

note = "Publisher Copyright: {\textcopyright} 2017 SPIE.; Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII 2017 ; Conference date: 30-01-2017 Through 02-02-2017",

year = "2017",

doi = "10.1117/12.2251269",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Beat Neuenschwander and Tetsuya Makimura and Grigoropoulos, \{Costas P.\} and Gediminas Raciukaitis",

booktitle = "Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII",

}

Kuk, S, Park, J, Zhang, T & Hwang, DJ 2017, Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition. in B Neuenschwander, T Makimura, CP Grigoropoulos & G Raciukaitis (eds), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII., 1009110, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10091, SPIE, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII 2017, San Francisco, United States, 01/30/17. https://doi.org/10.1117/12.2251269

Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition. / Kuk, Seungkuk; Park, Jongmin; Zhang, Tao et al.
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII. ed. / Beat Neuenschwander; Tetsuya Makimura; Costas P. Grigoropoulos; Gediminas Raciukaitis. SPIE, 2017. 1009110 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10091).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition

AU - Kuk, Seungkuk

AU - Park, Jongmin

AU - Zhang, Tao

AU - Hwang, David J.

PY - 2017

Y1 - 2017

N2 - In this study, silicon nitride film is deposited by laser assisted chemical vapor deposition technique based on the direct photolysis of SiH4/NH3 gas mixture using argon fluoride excimer laser of 193 nm wavelength at low substrate temperature around 100°C. By illuminating laser beam in parallel to sample surface, sample damage or heating can be avoided allowing compatibility of temperature sensitive device architectures. A wide range of processing parameters for laser and reactant gases are examined in correlation with deposition mechanisms.

AB - In this study, silicon nitride film is deposited by laser assisted chemical vapor deposition technique based on the direct photolysis of SiH4/NH3 gas mixture using argon fluoride excimer laser of 193 nm wavelength at low substrate temperature around 100°C. By illuminating laser beam in parallel to sample surface, sample damage or heating can be avoided allowing compatibility of temperature sensitive device architectures. A wide range of processing parameters for laser and reactant gases are examined in correlation with deposition mechanisms.

KW - Excimer laser

KW - Laser assisted chemical vapor deposition

KW - Low substrate temperature

KW - Silicon nitride film

UR - https://www.scopus.com/pages/publications/85020270699

U2 - 10.1117/12.2251269

DO - 10.1117/12.2251269

M3 - Conference contribution

AN - SCOPUS:85020270699

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII

A2 - Neuenschwander, Beat

A2 - Makimura, Tetsuya

A2 - Grigoropoulos, Costas P.

A2 - Raciukaitis, Gediminas

PB - SPIE

T2 - Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII 2017

Y2 - 30 January 2017 through 2 February 2017

ER -

Kuk S, Park J, Zhang T, Hwang DJ. Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition. In Neuenschwander B, Makimura T, Grigoropoulos CP, Raciukaitis G, editors, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII. SPIE. 2017. 1009110. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2251269

Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition

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