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Low-temperature transport in high-conductivity correlated metals: A density functional plus dynamical mean-field study of cubic perovskites

  • Harrison LaBollita
  • , Jeremy Lee-Hand
  • , Fabian B. Kugler
  • , Lorenzo Van Muñoz
  • , Sophie Beck
  • , Alexander Hampel
  • , Jason Kaye
  • , Antoine Georges
  • , Cyrus E. Dreyer
  • Simons Foundation
  • Stony Brook University
  • University of Cologne
  • Massachusetts Institute of Technology
  • Collège de France
  • IP Paris
  • University of Geneva

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

While methods based on density-functional perturbation theory have dramatically improved our understanding of electron-phonon contributions to transport in materials, methods for accurately capturing electron-electron scattering relevant to low temperatures have seen significantly less development. The case of high-conductivity, moderately correlated materials characterized by low scattering rates is particularly challenging, since exquisite numerical precision of the low-energy electronic structure is required. Recent methodological advancements to density-functional theory combined with dynamical mean-field theory (DFT + DMFT), including adaptive Brillouin-zone integration and numerically precise self-energies, enable a rigorous investigation of electron-electron scattering in such materials. In particular, these tools may be leveraged to perform a robust scattering-rate analysis on both real- and imaginary-frequency axes. Applying this methodology to a subset of ABO3 perovskite oxides—SrVO3, SrMoO3, PbMoO3, and SrRuO3—we demonstrate its ability to obtain quantitative convergence of the local electron-electron contributions to the temperature-dependent direct-current resistivity. This combination of numerical techniques offers fundamental insight into the role of electronic correlations in transport phenomena and provides a predictive tool for identifying materials with potential for technological applications.

Original languageEnglish
Article number085125
JournalPhysical Review B
Volume113
Issue number8
DOIs
StatePublished - Jan 2026

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