Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation

A. V. Selivanov; M. Ya Vinnichenko; I. S. Makhov; D. A. Firsov; L. E. Vorobjev; L. Shterengas; G. Belenky

doi:10.1088/1742-6596/917/6/062027

Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation

A. V. Selivanov
, M. Ya Vinnichenko
, I. S. Makhov
, D. A. Firsov
, L. E. Vorobjev
, L. Shterengas
, G. Belenky

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University
Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have experimentally studied the photoluminescence from InGaAsSb/AlGaAsSb quantum wells of different width under different levels of interband optical pumping. The dependences of photoluminescence intensity at spectral maxima on carrier concentration were theoretically calculated. This dependence was received using the rate equation taking into account the role of radiative and nonradiative recombination. Comparison of the theoretical and experimental results allowed to determine the nonequilibrium carrier concentration in quantum wells at certain experimental conditions.

Original language	English
Article number	062027
Journal	Journal of Physics: Conference Series
Volume	917
Issue number	6
DOIs	https://doi.org/10.1088/1742-6596/917/6/062027
State	Published - Nov 23 2017
Event	4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures - Saint-Petersburg, Russian Federation Duration: Apr 3 2017 → Apr 6 2017

Access to Document

10.1088/1742-6596/917/6/062027

Cite this

@article{c60293ca94f341d88e6b5f2928f8a0f9,

title = "Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation",

abstract = "We have experimentally studied the photoluminescence from InGaAsSb/AlGaAsSb quantum wells of different width under different levels of interband optical pumping. The dependences of photoluminescence intensity at spectral maxima on carrier concentration were theoretically calculated. This dependence was received using the rate equation taking into account the role of radiative and nonradiative recombination. Comparison of the theoretical and experimental results allowed to determine the nonequilibrium carrier concentration in quantum wells at certain experimental conditions.",

author = "Selivanov, \{A. V.\} and Vinnichenko, \{M. Ya\} and Makhov, \{I. S.\} and Firsov, \{D. A.\} and Vorobjev, \{L. E.\} and L. Shterengas and G. Belenky",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 4th International School and Conference {"}Saint Petersburg OPEN 2017{"} on Optoelectronics, Photonics, Engineering and Nanostructures ; Conference date: 03-04-2017 Through 06-04-2017",

year = "2017",

month = nov,

day = "23",

doi = "10.1088/1742-6596/917/6/062027",

language = "English",

volume = "917",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

number = "6",

}

TY - JOUR

T1 - Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation

AU - Selivanov, A. V.

AU - Vinnichenko, M. Ya

AU - Makhov, I. S.

AU - Firsov, D. A.

AU - Vorobjev, L. E.

AU - Shterengas, L.

AU - Belenky, G.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2017/11/23

Y1 - 2017/11/23

N2 - We have experimentally studied the photoluminescence from InGaAsSb/AlGaAsSb quantum wells of different width under different levels of interband optical pumping. The dependences of photoluminescence intensity at spectral maxima on carrier concentration were theoretically calculated. This dependence was received using the rate equation taking into account the role of radiative and nonradiative recombination. Comparison of the theoretical and experimental results allowed to determine the nonequilibrium carrier concentration in quantum wells at certain experimental conditions.

AB - We have experimentally studied the photoluminescence from InGaAsSb/AlGaAsSb quantum wells of different width under different levels of interband optical pumping. The dependences of photoluminescence intensity at spectral maxima on carrier concentration were theoretically calculated. This dependence was received using the rate equation taking into account the role of radiative and nonradiative recombination. Comparison of the theoretical and experimental results allowed to determine the nonequilibrium carrier concentration in quantum wells at certain experimental conditions.

UR - https://www.scopus.com/pages/publications/85036464586

U2 - 10.1088/1742-6596/917/6/062027

DO - 10.1088/1742-6596/917/6/062027

M3 - Conference article

AN - SCOPUS:85036464586

SN - 1742-6588

VL - 917

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 6

M1 - 062027

T2 - 4th International School and Conference "Saint Petersburg OPEN 2017" on Optoelectronics, Photonics, Engineering and Nanostructures

Y2 - 3 April 2017 through 6 April 2017

ER -

Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this