Macroscopic results for a novel oxygenated silicon material

S. J. Watts; C. Da Via'; A. Karpenko

doi:10.1016/S0168-9002(02)00547-8

Macroscopic results for a novel oxygenated silicon material

S. J. Watts
, C. Da Via'
, A. Karpenko

Physics and Astronomy

Brunel University London

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O(2i)) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4kΩcm, with an oxygen concentration of 10¹⁵ and 10¹⁷cm^-3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24GeV/c protons are shown.

Original language	English
Pages (from-to)	153-158
Number of pages	6
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	485
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-9002(02)00547-8
State	Published - Jun 1 2002

Keywords

DLTS
Oxygen
Oxygen dimer
Silicon detector

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10.1016/S0168-9002(02)00547-8

Cite this

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title = "Macroscopic results for a novel oxygenated silicon material",

abstract = "High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O(2i)) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4kΩcm, with an oxygen concentration of 1015 and 1017cm-3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24GeV/c protons are shown.",

keywords = "DLTS, Oxygen, Oxygen dimer, Silicon detector",

author = "Watts, \{S. J.\} and \{Da Via'\}, C. and A. Karpenko",

year = "2002",

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doi = "10.1016/S0168-9002(02)00547-8",

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journal = "Nuclear Inst. and Methods in Physics Research, A",

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T1 - Macroscopic results for a novel oxygenated silicon material

AU - Watts, S. J.

AU - Da Via', C.

AU - Karpenko, A.

PY - 2002/6/1

Y1 - 2002/6/1

N2 - High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O(2i)) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4kΩcm, with an oxygen concentration of 1015 and 1017cm-3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24GeV/c protons are shown.

AB - High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O(2i)) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4kΩcm, with an oxygen concentration of 1015 and 1017cm-3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24GeV/c protons are shown.

KW - DLTS

KW - Oxygen

KW - Oxygen dimer

KW - Silicon detector

UR - https://www.scopus.com/pages/publications/14244271159

U2 - 10.1016/S0168-9002(02)00547-8

DO - 10.1016/S0168-9002(02)00547-8

M3 - Article

AN - SCOPUS:14244271159

SN - 0168-9002

VL - 485

SP - 153

EP - 158

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1-2

ER -

Macroscopic results for a novel oxygenated silicon material

Abstract

Keywords

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