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MALTA3: Concepts for a new radiation tolerant sensor in the TowerJazz 180 nm technology

  • Dominik Dobrijević
  • , Phil Allport
  • , Ignacio Asensi
  • , Dumitru Vlad Berlea
  • , Daniela Bortoletto
  • , Craig Buttar
  • , Florian Dachs
  • , Valerio Dao
  • , Haluk Denizli
  • , Leyre Flores
  • , Andrea Gabrielli
  • , Laura Gonella
  • , Vicente González
  • , Matt LeBlanc
  • , Marcos Vázquez Núñez
  • , Kaan Oyulmaz
  • , Heinz Pernegger
  • , Francesco Piro
  • , Petra Riedler
  • , Heidi Sandaker
  • Carlos Solans Sánchez, Walter Snoeys, Tomislav Suligoj, Milou van Rijnbach, Julian Weick, Steven Worm
  • CERN
  • University of Zagreb
  • University of Birmingham
  • German Electron Synchrotron
  • University of Oxford
  • University of Glasgow
  • Abant Izzet Baysal University
  • University of Valencia
  • Swiss Federal Institute of Technology Lausanne
  • Technische Universität Darmstadt
  • University of Oslo

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The upgrade of the MALTA DMAPS designed in Tower 180 nm CMOS Imaging process will implement the numerous modifications, as well as front-end changes in order to boost the charge collection efficiency after the targeted fluence of 1x10151MeVneq/cm2. The effectiveness of these changes have been demonstrated in recent measurements with a small-scale Mini-MALTA demonstrator chip. Multiple changes in the digital periphery are proposed: The asynchronous address generator will be revised to provide more control over the pulse length. The Synchronization memory will be upgraded with the goal of achieving a sub-nanosecond timing resolution. Serial chip to chip data transfer will be prototyped, in order to gauge the plausibility of implementation on a future full sized chip. Apart from these changes, research of the overall sensor architecture will be discussed as well.

Original languageEnglish
Article number167226
JournalNuclear Inst. and Methods in Physics Research, A
Volume1040
DOIs
StatePublished - Oct 1 2022

Keywords

  • Monolithic active pixel sensors
  • Radiation hard electronics
  • Silicon detectors

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