@inproceedings{587cb1e8bc80428d80217f41206d38c2,
title = "Mapping of defects in large-area silicon carbide wafers via photoluminescence and its correlation with synchrotron white beam X-ray Topography",
abstract = "Comparative studies of defect microstructure in 4H-SiC wafers have been carried out using photoluminescence (PL) imaging and grazing-incidence Synchrotron White Beam X-ray Topography. Images of low angle grain boundaries on the PL images correlate well with SWBXT observations, and similar correlation can be established for some micropipe images although the latter is complicated by the overall level of distortion and misorientation associated with the low angle grain boundaries and the fact that many of the micropipes are located in or close to the boundaries. This validation indicates that PL imaging may provide a rapid way of imaging such defect structures in large-scale SiC wafers.",
keywords = "Defects, Low angle grain boundary, Photoluminescence, Synchrotron white beam x-ray topography",
author = "Y. Chen and R. Balaji and M. Dudley and M. Murthy and S. Maximenko and Freitas, \{J. A.\}",
year = "2009",
doi = "10.4028/www.scientific.net/msf.600-603.549",
language = "English",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "549--552",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}