Material defects in 4H-silicon carbide diodes

Uwe Zimmermann; John Österman; Dan Kuylenstierna; Anders Hallén; Andrey O. Konstantinov; William M. Vetter; Michael Dudley

doi:10.1063/1.1525065

Material defects in 4H-silicon carbide diodes

Uwe Zimmermann
, John Österman
, Dan Kuylenstierna
, Anders Hallén
, Andrey O. Konstantinov
, William M. Vetter
, Michael Dudley

Materials Science and Engineering

KTH Royal Institute of Technology
Chalmers University of Technology
RISE Research Institutes of Sweden
Stony Brook University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The correlation between the electrical characteristics and the crystal defects of silicon carbide diodes were studied. The function of crystal defects on stack fault formation was also discussed. Diodes with crystal defects showed a reduction in reverse breakdown voltage. Microplasma current paths were exposed on increasing the electroluminescence.

Original language	English
Pages (from-to)	611-618
Number of pages	8
Journal	Journal of Applied Physics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.1525065
State	Published - Jan 1 2003

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title = "Material defects in 4H-silicon carbide diodes",

abstract = "The correlation between the electrical characteristics and the crystal defects of silicon carbide diodes were studied. The function of crystal defects on stack fault formation was also discussed. Diodes with crystal defects showed a reduction in reverse breakdown voltage. Microplasma current paths were exposed on increasing the electroluminescence.",

author = "Uwe Zimmermann and John {\"O}sterman and Dan Kuylenstierna and Anders Hall{\'e}n and Konstantinov, \{Andrey O.\} and Vetter, \{William M.\} and Michael Dudley",

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AU - Zimmermann, Uwe

AU - Österman, John

AU - Kuylenstierna, Dan

AU - Hallén, Anders

AU - Konstantinov, Andrey O.

AU - Vetter, William M.

AU - Dudley, Michael

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The correlation between the electrical characteristics and the crystal defects of silicon carbide diodes were studied. The function of crystal defects on stack fault formation was also discussed. Diodes with crystal defects showed a reduction in reverse breakdown voltage. Microplasma current paths were exposed on increasing the electroluminescence.

AB - The correlation between the electrical characteristics and the crystal defects of silicon carbide diodes were studied. The function of crystal defects on stack fault formation was also discussed. Diodes with crystal defects showed a reduction in reverse breakdown voltage. Microplasma current paths were exposed on increasing the electroluminescence.

UR - https://www.scopus.com/pages/publications/0037257909

U2 - 10.1063/1.1525065

DO - 10.1063/1.1525065

M3 - Article

AN - SCOPUS:0037257909

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VL - 93

SP - 611

EP - 618

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Material defects in 4H-silicon carbide diodes

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