TY - JOUR
T1 - Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source
AU - Mironova, M.
AU - Metodiev, K.
AU - Allport, P.
AU - Berdalovic, I.
AU - Bortoletto, D.
AU - Buttar, C.
AU - Cardella, R.
AU - Dao, V.
AU - Dyndal, M.
AU - Freeman, P.
AU - Flores Sanz de Acedo, L.
AU - Gonella, L.
AU - Kugathasan, T.
AU - Pernegger, H.
AU - Piro, F.
AU - Plackett, R.
AU - Riedler, P.
AU - Sharma, A.
AU - Schioppa, E. J.
AU - Shipsey, I.
AU - Solans Sanchez, C.
AU - Snoeys, W.
AU - Wennlöf, H.
AU - Weatherill, D.
AU - Wood, D.
AU - Worm, S.
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/3/11
Y1 - 2020/3/11
N2 - This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 μm steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous n− layer layout and front-end, and extra deep p-well and n− gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15 neq∕cm2. For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations.
AB - This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 μm steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous n− layer layout and front-end, and extra deep p-well and n− gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15 neq∕cm2. For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations.
KW - CMOS sensors
KW - MALTA
KW - Monolithic active pixel sensors
KW - Radiation-hard detectors
KW - Synchrotron light source
KW - TowerJazz
UR - https://www.scopus.com/pages/publications/85077506177
U2 - 10.1016/j.nima.2019.163381
DO - 10.1016/j.nima.2019.163381
M3 - Article
AN - SCOPUS:85077506177
SN - 0168-9002
VL - 956
JO - Nuclear Inst. and Methods in Physics Research, A
JF - Nuclear Inst. and Methods in Physics Research, A
M1 - 163381
ER -