Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications

Gregory Belenky; Ding Wang; Youxi Lin; Dmitry Donetsky; Gela Kipshidze; Leon Shterengas; David Westerfeld; Wendy L. Sarney; Stefan P. Svensson

doi:10.1063/1.4796181

Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications

Gregory Belenky
, Ding Wang
, Youxi Lin
, Dmitry Donetsky
, Gela Kipshidze
, Leon Shterengas
, David Westerfeld
, Wendy L. Sarney
, Stefan P. Svensson

Electrical Engineering

Stony Brook University
U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Metamorphic heterostructures containing bulk InAs_1-xSb _x layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 μm thick InAsSb_0.44 layer with an absorption edge above 9 μm exhibited an in-plane residual strain of about 0.08. InAs_1-xSb _x structures with x 0.2 and x 0.44 operated as light emitting diodes at 80 K demonstrated output powers of 90 μW and 8 μW at 5 μm and 8 μm, respectively.

Original language	English
Article number	111108
Journal	Applied Physics Letters
Volume	102
Issue number	11
DOIs	https://doi.org/10.1063/1.4796181
State	Published - Mar 18 2013

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title = "Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications",

abstract = "Metamorphic heterostructures containing bulk InAs1-xSb x layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 μm thick InAsSb0.44 layer with an absorption edge above 9 μm exhibited an in-plane residual strain of about 0.08. InAs1-xSb x structures with x 0.2 and x 0.44 operated as light emitting diodes at 80 K demonstrated output powers of 90 μW and 8 μW at 5 μm and 8 μm, respectively.",

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T1 - Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications

AU - Belenky, Gregory

AU - Wang, Ding

AU - Lin, Youxi

AU - Donetsky, Dmitry

AU - Kipshidze, Gela

AU - Shterengas, Leon

AU - Westerfeld, David

AU - Sarney, Wendy L.

AU - Svensson, Stefan P.

PY - 2013/3/18

Y1 - 2013/3/18

N2 - Metamorphic heterostructures containing bulk InAs1-xSb x layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 μm thick InAsSb0.44 layer with an absorption edge above 9 μm exhibited an in-plane residual strain of about 0.08. InAs1-xSb x structures with x 0.2 and x 0.44 operated as light emitting diodes at 80 K demonstrated output powers of 90 μW and 8 μW at 5 μm and 8 μm, respectively.

AB - Metamorphic heterostructures containing bulk InAs1-xSb x layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 μm thick InAsSb0.44 layer with an absorption edge above 9 μm exhibited an in-plane residual strain of about 0.08. InAs1-xSb x structures with x 0.2 and x 0.44 operated as light emitting diodes at 80 K demonstrated output powers of 90 μW and 8 μW at 5 μm and 8 μm, respectively.

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DO - 10.1063/1.4796181

M3 - Article

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SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111108

ER -

Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications

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