@inproceedings{c4b9beec411b4b91b6b3bff163d8f4d2,
title = "Micropipe dissociation through thick n+ buffer layer growth",
abstract = "Thick (> 25 μrn) 4H n+ epitaxial layer growth was performed on 4H n+ substrates utilizing chlorine containing etch chemistries in a hot wall CVD system. Optimization of the n+ epitaxial layer growth was achieved by varying C/Si ratio and N2 flow. Desired epitaxial layers have doping levels > 5×10 cm-3{"}, epitaxial surface roughness <10 nm on a 20×20 μm area and overall micropipe density reduction. To confirm the conversion of micropipes into closed core screw dislocations, microscopic examination of the epitaxial and wafer surfaces was carried out after KOH etching. Grazing incidence x-ray topography (XRT) as well as cross sectional XRT and microscopy were also performed. The cross sectional evaluation showed that the dissociation of the micropipes occurs very close to the epitaxy/wafer interface.",
keywords = "KOH etch, Micropipe dissociation, XRT",
author = "MacMillan, \{M. F.\} and E. Sanchez and M. Dudley and Yi Chen and Loboda, \{M. J.\}",
year = "2009",
doi = "10.4028/www.scientific.net/msf.600-603.167",
language = "English",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "167--170",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}