Abstract
Micropipes in a 6H-SiC semiconductor wafer were studied by scanning electron and atomic force microscopy. The screw dislocations intersecting the wafer's surface were located by etch pitting, and their Burgers vectors determined by x-ray topography. The etch pits were eroded into smooth craters by ion beam etching to expose levels of dislocation line from inside the sample's bulk. There a micropipe's diameter is distant from surface relaxation effects. Hollow cores (micropipes) were observed at the base of the craters whose screw dislocations had Burgers vectors of magnitude three multiples of the c-lattice parameter and higher. Screw dislocations with 1c and 2c Burgers vectors had no associated micropipes.
| Original language | English |
|---|---|
| Pages (from-to) | 1649-1652 |
| Number of pages | 4 |
| Journal | Journal of Materials Research |
| Volume | 15 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 2000 |
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